PZTM1101 Philips Semiconductors, PZTM1101 Datasheet - Page 4

• Manufacturer Part Number: PZTM1101
• Description: NPN transistor/Schottky-diode module
• Manufacturer: Philips Semiconductors

Philips Semiconductors
Notes
1. Measured under pulsed conditions: t
2. Limiting value for T
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
1996 May 09
Schottky barrier diode
V
I
I
C
R
SYMBOL
SYMBOL
R
R
F
j
th j-a
NPN transistor/Schottky-diode module
runaway leading to thermal destruction of the diode. A peak junction temperature of T
forward voltage applied.
forward voltage
reverse current
reverse current
junction capacitance
thermal resistance from junction to ambient (combined device) note 1
j
PARAMETER
= 125 C; T
j
= 150 C with reverse current applied is not allowed as this may cause thermal
PARAMETER
p
300 s;
I
I
I
I
V
V
T
V
V
T
V
F
F
F
F
R
R
amb
R
R
amb
R
= 100 mA; note 1
= 100 mA; T
= 1 A; note 1
= 1 A; T
= 40 V; note 1
= 40 V; T
= 10 V; note 1
= 10 V; T
= 0 V; f = 1 MHz
= 55 to +150 C; note 1
= 55 to +150 C; note 1
0.01.
4
amb
j
j
= 125 C;
= 125 C;
= 55 to +150 C; note 1
amb
CONDITIONS
= 55 to +150 C; note 1
CONDITIONS
j
= 150 C is only allowed with
MIN.
VALUE
Product specification
100
PZTM1101
330
400
500
560
300
35
40
15
250
MAX.
(2)
(2)
UNIT
K/W
mV
mV
mV
mV
mA
mA
pF
UNIT
A
A