PZTM1102 Philips Semiconductors, PZTM1102 Datasheet - Page 2

• Manufacturer Part Number: PZTM1102
• Description: PNP transistor/Schottky-diode module
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PINNING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. An additional copper area of >20 mm
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
1996 May 09
PNP transistor
V
V
V
I
Schottky barrier diode
V
I
I
P
T
Combined device
P
T
T
T
SYMBOL
C
F
F(AV)
Low output capacitance
Fast switching time
Integrated Schottky protection
diode.
High-speed switching for industrial
applications.
j
amb
stg
j
PIN
CBO
CES
EBO
R
tot
PNP transistor/Schottky-diode module
1
2
3
4
cathode Schottky
base
emitter
collector, anode Schottky
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
continuous reverse voltage
forward current (DC)
average forward current
power dissipation
junction temperature
total power dissipation
operating ambient temperature
storage temperature
junction temperature
DESCRIPTION
PARAMETER
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
2
is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
Marking code: TM1102.
open emitter
V
open collector
up to T
reverse current applied
forward current applied
up to T
BE
handbook, halfpage
= 0
amb
amb
Fig.1 Simplified outline (SOT223) and symbol.
2
= 25 C; note 1
= 25 C; note 2
Top view
CONDITIONS
1
2
4
3
MAM237
2
55
55
MIN.
1
3
Product specification
40
1
1
0.5
125
150
1.2
+150
+150
150
PZTM1102
4
40
40
6
200
MAX.
V
V
V
mA
V
A
A
W
W
C
C
C
C
C
UNIT