FMBA0656 Fairchild Semiconductor, FMBA0656 Datasheet
FMBA0656
Manufacturer Part Number
FMBA0656
Description
NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMBA0656.pdf
(2 pages)
Electrical Characteristics
Absolute Maximum Ratings
Symbol
BV
BV
BV
*
Symbol
V
V
V
I
P
T
T
R
1997 Fairchild Semiconductor Corporation
This device was designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 33 (NPN) and Process 73 (PNP).
NPN & PNP Complementary Dual Transistor
SuperSOT- 6 Surface Mount Package
C
Pd total, for both transistors. For each transistor, Pd = 350mW.
STG
J
CEO
CBO
EBO
D
JA
CEO
CBO
EBO
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (continuous)
Power Dissipation @Ta = 25°C*
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Ambient
C1
FMBA0656
E1
C2
B1
E2
B2
T
T
A = 25°C unless otherwise noted
A = 25°C unless otherwise noted
Test Conditions
Ic = 1.0 mA
Ic = 100 uA
Ie = 100 uA
Page 1 of 2
Package: SuperSOT-6
Device Marking: .003
Note: The "
-55 to +150
Transistor 1 is NPN device,
transistor 2 is PNP device.
Value
500
150
180
0.7
80
80
4
.
" (dot) signifies Pin 1
Signal Technologies
Discrete Power
Min
80
80
4
fmba0656.lwpPr33&73(Y3)
&
Units
°C/W
mA
°C
°C
W
Max
V
V
V
Units
V
V
V
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FMBA0656 Summary of contents
Page 1
... A = 25°C unless otherwise noted Test Conditions 100 100 uA Page Discrete Power & Signal Technologies . " (dot) signifies Pin 1 transistor 2 is PNP device. Value Units 500 mA 0.7 W °C 150 °C 180 °C/W Min Max fmba0656.lwpPr33&73(Y3) Units ...
Page 2
... A = 25°C unless otherwise noted Test Conditions Vcb = 80 V Vce = 60 V Vce = Vce = 100 100 mA 100 mA, Vce = 1 V Vce = 100 mA 100 MHz Page Min Max Units 100 nA 100 nA 100 - 100 0. fmba0656.lwpPr33&73(Y3) ...