BC808-40 Diotec Semiconductor, BC808-40 Datasheet
BC808-40
Manufacturer Part Number
BC808-40
Description
Surface mount Si-Epitaxial PlanarTransistors
Manufacturer
Diotec Semiconductor
Datasheet
1.BC808-40.pdf
(2 pages)
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1
2
BC 807 / BC 808
Maximum ratings (T
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics, T
DC current gain – Kollektor-Basis-Stromverhältnis
) Mounted on P.C. board with 3 mm
PNP
- V
- V
- V
Montage auf Leiterplatte mit 3 mm
1
CE
CE
CE
1 = B
0.4
Dimensions / Maße in mm
= 1 V, - I
= 1 V, - I
= 1 V, - I
Code
Type
2.9
1.9
±0.1
3
2 = E
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
2
C
C
C
= 100 mA
= 500 mA
= 100 mA
j
= 25
A
3 = C
1.1
Surface mount Si-Epitaxial PlanarTransistors
= 25
/
C
/
C)
2
2
copper pad at each terminal
Kupferbelag (Lötpad) an jedem Anschluß
BC807
BC808
Group -16
Group -25
Group -40
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
B open
B shorted
E open
C open
h
h
h
h
h
P
I
T
- V
- V
- V
- V
- I
- I
- I
T
EM
FE
FE
FE
FE
FE
tot
j
S
C
CM
BM
CE0
CES
CB0
EB0
Min.
100
100
160
250
40
General Purpose Transistors
BC 807
45 V
50 V
50 V
Grenzwerte (T
- 65…+ 150
Kennwerte, T
310 mW
1000 mA
1000 mA
800 mA
200 mA
Typ.
150
160
250
400
5 V
–
–
/
C
1
)
/
BC 808
C
25 V
30 V
30 V
A
(TO-236)
310 mW
j
01.11.2003
Max.
= 25
SOT-23
600
250
400
600
= 25
–
0.01 g
PNP
/
/
C)
C
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BC808-40 Summary of contents
Page 1
... V CES E open - V CB0 C open - V EB0 P tot - BC807 FE BC808 h FE Group - Group - Group - copper pad at each terminal 2 Kupferbelag (Lötpad) an jedem Anschluß General Purpose Transistors PNP 310 mW SOT-23 (TO-236) 0.01 g Grenzwerte ( ...
Page 2
... MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Strom- verstärkungsgruppen pro Typ 1 ) Mounted on P.C. board with 3 mm Montage auf Leiterplatte mit ...