2SB1188 Weitron Technology, 2SB1188 Datasheet - Page 3

• Manufacturer Part Number: 2SB1188
• Description: Epitaxial Planar PNP Transistors
• Manufacturer: Weitron Technology

http://www.weitron.com.tw
ELECTRICAL CHARACTERISTIC CURVES
F IG .5 C ollector-emitter s aturation
F IG .1 G rounded emitter propagation
500
200
100
-1000
WEITRON
-500 T a =25 C
-200
-100
50
20
-500
-200
-100
2SB1188
-50
-50
-20
-10
-5
-2
-1
0
F IG .3 DC current gain vs .
-5
T a=100 C
-5
B AS E T O E MIT T E R V O L T AG E : V
voltage vs . collector current
-0.2
characteris tics
C O L L E C T O R C UR R E NT : I
C O L L E C T O R C UR R E NT : I
-10
-10
25 C
40 C
-0.4
I
C
/I
-20
collector current
B
-20
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
=50
20
10
-50
-50
-100
-100
V
C E
-200
-200
=6V
3V
1V
-500 -1000 -2000
-500 -1000 -2000
C
C
T a =25 C
V
(mA)
(mA)
C E
=-3V
B E
(V )
F IG .6 C ollector-emitter s aturation
500
200
100
-0.5
-0.4
-0.3
-0.2
-0.1
-500
-200
-100
50
20
-50
-20
C O LLE C T O R T O E MIT T E R V O LT AG E : V
0
0
F IG .2 G rounded emitter output
F IG .4 DC current gain vs .
T a=25 C
l
voltage vs . collector current
-5
C
-5
/l
B
C O L L E C T O R C UR R E NT : I
C O LLE C T O R C UR R E NT : I
=10
-10
-10
-0.4
characteris tics
T a =100 C
T a =100 C
collector current
-20
-20
25 C
40 C
25 C
25 C
-0.8
-50
-50 -100
-100
-1.2
-200
-200
-500 -1000 -2000
-500 -1000 -2000
-1.6
C
C
V
I
(mA)
(mA)
B
C E
=0A
=-3V
C E
-2
(V )