2SB1340 Inchange Semiconductor Company Limited, 2SB1340 Datasheet
2SB1340
Manufacturer Part Number
2SB1340
Description
Silicon PNP Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company Limited
Datasheet
1.2SB1340.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·High DC Current Gain-
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: V
: h
V
V
V
T
I
P
I
T
CBO
CEO
EBO
CM
stg
C
C
J
FE
(BR)CEO
Silicon PNP Darlington Power Transistor
= 2000(Min)@ (V
= -120V(Min)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature
a
C
=25℃
=25℃
PARAMETER
CE
= -3V, I
C
= -2A)
a
=25℃)
-55~150
VALUE
-120
-120
150
-10
30
-6
-6
2
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SB1340
www.DataSheet4U.com
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2SB1340 Summary of contents
Page 1
... Collector Current-Peak CM Collector Power Dissipation @T =25℃ Collector Power Dissipation @T =25℃ C Junction Temperature T J Storage Temperature T stg isc Website：www.iscsemi.cn = -2A) C =25℃) a VALUE UNIT -120 V -120 - ℃ 150 ℃ -55~150 www.DataSheet4U.com isc Product Specification 2SB1340 ...
Page 2
... -120 -3A -6mA -120V ; -5V - -3V 2000 -10V 1MHz test 0. -5V 10MHz test www.DataSheet4U.com 2SB1340 MIN TYP. MAX UNIT V V -1.5 V μA -100 -3 mA 20000 MHz ...