MC100EP16VC ON Semiconductor, MC100EP16VC Datasheet - Page 3

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MC100EP16VC

Manufacturer Part Number
MC100EP16VC
Description
5V ECL Differential Receiver/Driver
Manufacturer
ON Semiconductor
Datasheet

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
2. Input and output parameters vary 1:1 with V
3. All loading with 50 W to V
4. V
Table 3. MAXIMUM RATINGS
Table 4. 100EP DC CHARACTERISTICS, PECL
Symbol
Symbol
V
V
V
I
I
T
T
q
q
q
q
q
T
I
V
V
V
V
V
V
I
I
out
BB
EE
IH
IL
A
stg
JA
JC
JA
JC
JA
sol
CC
EE
I
OH
OL
IH
IL
BB
IHCMR
input signal.
IHCMR
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Power Supply Current
Output HIGH Voltage (Note 3)
Output LOW Voltage (Note 3)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Output Voltage Reference
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 4)
Input HIGH Current
Input LOW Current
BB
Sink/Source
Characteristic
CC
Parameter
EE
− 2.0 V.
, V
IHCMR
max varies 1:1 with V
CC
. V
Pb−Free
EE
D
can vary +0.3 V to −2.2 V.
Pb
V
2125
1305
2075
1355
1730
CC
Min
http://onsemi.com
2.0
0.5
25
V
V
V
V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
= 3.3 V, V
EE
CC
EE
CC
CC
Condition 1
= 0 V
= 0 V
−40°C
= 0 V
= 0 V
2250
1400
1845
. The V
Typ
36
3
EE
IHCMR
= 0 V (Note 2)
2375
1555
2420
1675
1960
Max
150
3.3
45
range is referenced to the most positive side of the differential
2125
1305
2075
1355
1730
Min
2.0
0.5
30
V
V
8 SOIC
8 SOIC
8 SOIC
8 TSSOP
8 TSSOP
8 TSSOP
DFN8
DFN8
I
I
v V
w V
Condition 2
25°C
2250
1400
1845
Typ
CC
EE
40
2375
1555
2420
1675
1960
Max
150
3.3
50
2125
1305
2075
1355
1730
Min
2.0
0.5
32
−65 to +150
−40 to +85
41 to 44
41 to 44
Rating
2250
1400
1845
85°C
Typ
± 1.5
42
100
190
130
185
140
129
265
265
−6
−6
50
84
6
6
2375
1555
2420
1675
1960
Max
150
3.3
52
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
Unit
mA
mA
mA
mA
mV
mV
mV
mV
mV
°C
°C
°C
mA
mA
V
V
V
V
V

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