MC10EP51 ON Semiconductor, MC10EP51 Datasheet - Page 6

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MC10EP51

Manufacturer Part Number
MC10EP51
Description
3.3V / 5V ECL D Flip-Flop
Manufacturer
ON Semiconductor
Datasheet

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NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
17. Input and output parameters vary 1:1 with V
18. All loading with 50 W to V
19. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 10. 100EP DC CHARACTERISTICS, NECL
Symbol
Table 11. AC CHARACTERISTICS
Symbol
I
V
V
V
V
V
I
I
f
t
t
t
t
t
t
t
t
t
EE
IH
IL
max
PLH
PHL
RR
S
H
PW
JITTER
r
f
OH
OL
IH
IL
IHCMR
input signal.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 18)
Output LOW Voltage (Note 18)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
Input HIGH Current
Input LOW Current
Maximum Frequency (Figure 2)
Propagation Delay to Output Differential
CLK, CLK to Q, Q
Reset Recovery
Setup Time
Hold Time
Minimum Pulse Width
Cycle−to−Cycle Jitter (Figure 2)
Output Rise/Fall Times
RESET
(20% − 80%)
Characteristic
Characteristic
CC
EE
− 2.0 V.
, V
IHCMR
RESET to Q, Q
V
max varies 1:1 with V
CC
= 0 V; V
CC
Q, Q
.
100
10
−1145
−1945
−1225
−1945
EE
Min
0.5
26
V
Min
= −3.0 V to −5.5 V or V
250
275
300
150
100
100
500
70
http://onsemi.com
V
EE
CC
+ 2.0
−40°C
−1020
−1820
= 0 V; V
CC
Typ
−40°C
34
. The V
Typ
300
340
380
440
120
> 3
.2
6
EE
−1695
−1625
−895
−880
Max
IHCMR
150
0.0
44
= −5.5 V to −3.0 V (Note 17)
Max
350
425
450
170
< 1
range is referenced to the most positive side of the differential
−1945
−1225
−1945
CC
−1145
Min
0.5
26
Min
270
300
325
150
100
100
500
V
80
= 3.0 V to 5.5 V; V
EE
+ 2.0
−1020
−1820
25°C
Typ
25°C
35
Typ
320
375
400
440
130
> 3
80
40
.2
CC
− 2.0 V.
−1695
−1625
−895
−880
Max
150
0.0
45
Max
370
450
475
180
< 1
EE
= 0 V (Note 20)
−1145
−1945
−1225
−1945
Min
0.5
Min
300
350
350
150
100
100
500
100
28
V
EE
+ 2.0
−1020
−1820
85°C
85°C
Typ
Typ
350
425
425
440
150
37
> 3
.2
−1695
−1625
−895
−880
Max
Max
150
420
500
500
200
0.0
< 1
47
GHz
Unit
Unit
mA
mV
mV
mV
mV
mA
mA
ps
ps
ps
ps
ps
ps
V

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