DTA114E ON Semiconductor, DTA114E Datasheet - Page 2

• Manufacturer Part Number: DTA114E
• Description: PNP SILICON BIAS RESISTOR TRANSISTOR
• Manufacturer: ON Semiconductor

2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector–Base Cutoff Current (V
Collector–Emitter Cutoff Current (V
Emitter–Base Cutoff Current
Collector–Base Breakdown Voltage (I
Collector–Emitter Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Output Voltage (on)
(V
(V
(I
(I
(I
(I
(I
(V
(V
C
C
C
C
C
EB
CE
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
C
E
E
B
B
B
C
B
B
= 5.0 mA)
= 0.3 mA) DTA144E/DTA114Y
= 0.3 mA)
= 5 mA) DTA123E
= 1 mA) DTA114T/DTA143T/
= 1 mA)
= 0)
= 2.5 V, R
= 3.5 V, R
Characteristic
DTA143Z/DTA124E
(2.)
DTB113E/DTA143E
L
L
= 1.0 k )
= 1.0 k )
CB
CE
= 50 V, I
C
(2.)
= 50 V, I
= 10 A, I
(T
(I
C
A
E
= 25 C unless otherwise noted)
= 2.0 mA, I
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA144E
= 0)
B
= 0)
E
= 0)
DTA114E SERIES
B
http://onsemi.com
= 0)
V
V
Symbol
V
2
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
V
CBO
CEO
h
EBO
FE
OL
Min
160
160
3.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
35
60
80
80
15
80
—
—
—
—
—
—
—
—
—
—
—
50
50
Typ
100
140
140
250
250
140
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
60
15
27
—
—
—
—
—
—
—
—
—
—
—
Max
0.18
0.25
100
500
0.2
0.9
1.9
4.3
2.3
1.5
0.2
0.2
0.2
0.5
0.2
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
—
—
—
—
—
—
—
—
—
—
—
—
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc