2N3960 Semicoa Semiconductor, 2N3960 Datasheet
2N3960
Manufacturer Part Number
2N3960
Description
Chip Type 2C3960 Geometry 0003 Polarity NPN
Manufacturer
Semicoa Semiconductor
Datasheet
1.2N3960.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3960
Manufacturer:
ST/MOTO
Quantity:
20 000
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, T
Derate above 25
Operating Junction Temperature
Storage Temperature
Type 2N3960
Geometry
Polarity NPN
Qual Level: JAN - JANTXV
Features:
Rating
General-purpose low-power NPN
silicon transistor.
Housed in
Also available in chip form using
the
The Min and Max limits shown are
per
Semicoa meets in all cases.
0003
MIL-PRF-19500/399
0003
chip geometry.
o
C
TO-18
A
= 25
o
case.
C
T
C
which
= 25
Maximum Ratings
o
C unless otherwise specified
Symbol
V
V
V
T
P
Generic Part Number:
2N3960
REF: MIL-PRF-19500/399
T
CEO
CBO
EBO
STG
T
J
Data Sheet No. 2N3960
-65 to +200
-65 to +200
Rating
400
TO-18
4.5
2.3
12
20
mW/
Unit
mW
o
o
V
V
V
C
C
o
C
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2N3960 Summary of contents
Page 1
... Semicoa meets in all cases. Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage o Power Dissipation Derate above 25 C Operating Junction Temperature Storage Temperature Data Sheet No. 2N3960 Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 which Maximum Ratings unless otherwise specified C Symbol V CEO V ...
Page 2
... CE C Open Circuit Output Capacitance 100 kHz < f < 1 MHz CB E Input Capacitance, Output Open Circuited 100 kHz < f < 1 MHz EB C Data Sheet No. 2N3960 Electrical Characteristics unless otherwise specified Symbol Min V 20 (BR)CBO V 12 (BR)CEO V 4 ...