TC2185 Microchip Technology Inc., TC2185 Datasheet - Page 3

• Manufacturer Part Number: TC2185
• Description: 50 Ma, 100 Ma, 150 Ma Cmos Ldos With Shutdown And Reference Bypass
• Manufacturer: Microchip Technology Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
TEMPERATURE CHARACTERISTICS
© 2006 Microchip Technology Inc.
Electrical Specifications: Unless otherwise specified, V
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Thermal Regulation
Thermal Shutdown Die
Temperature
Output Noise
Response Time
(from Shutdown Mode)
(Note 8)
SHDN Input
SHDN Input High
Threshold
SHDN Input Low
Threshold
Note 1: The minimum V
Electrical Specifications: Unless otherwise noted, V
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
Parameters
2: V
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
8: Time required for V
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
value.
excluding load or line regulation effects. Specifications are for a current pulse equal to I
temperature and the thermal resistance from junction-to-air (i.e. T
R
TCV
is the regulator output voltage setting. For example: V
Parameters
OUT
=
(
--------------------------------------------------------------------------- -
ΔV
V
IN
OUTMAX
OUT
has to meet two conditions: V
Sym
T
V
OUT
V
eN
T
SD
IH
R
IL
/ΔP
to reach 95% of V
V
–
D
OUT
V
OUTMIN
×
Δ
T
Min
—
—
—
—
60
—
)
×
10
Sym
θ
6 –
T
T
T
R
JA
DD
A
A
A
(output voltage setting), after V
0.04
IN
= +2.7V to +6.0V and V
Typ
160
200
60
—
—
IN
= V
= 2.7V and V
R
Min
-40
-40
-65
—
+ 1V, I
R
Max
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
15
—
—
—
—
—
L
= 100 µA, C
Typ
255
—
—
—
IN
A
= V
, T
TC2014/2015/2185
nV/√Hz I
Units
J
%V
%V
R
SS
V/W
, θ
°C
µs
+ V
JA
= GND.
+125
+125
+150
Max
IN
IN
OUT
—
SHDN
).
DROPOUT
Note 6, Note 7
470 pF from Bypass to GND
V
C
V
V
= 3.3 µF, SHDN > V
L
IN
IN
IN
IN
= I
is switched from 0 to V
= 4V, I
= 1 µF, C
= 2.5V to 6.0V
= 2.5V to 6.0V
OUTMAX
.
Units
°C/W
°C
°C
°C
MAX
L
= 30 mA,
, F = 10 kHz
OUT
at V
Conditions
IN
= 10 µF
IH
= 6V for T = 10 ms.
, T
Conditions
DS21662E-page 3
A
IN
= +25°C.
.