LMBT6520LT1G Leshan Radio Company, LMBT6520LT1G Datasheet

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LMBT6520LT1G

Manufacturer Part Number
LMBT6520LT1G
Description
High Voltage Transistor Lmbt6520lt1g
Manufacturer
Leshan Radio Company
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LMBT6520LT1G
Manufacturer:
ON
Quantity:
120 000
Part Number:
LMBT6520LT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
High Voltage Transistor
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
We declare that the material of product
Ordering Information
compliance with RoHS requirements.
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage
Base Current
Collector Current — Continuous
LMBT6520LT1G = 2Z
Collector–Emitter Breakdown Voltage (I
Collector–Base Breakdown Voltage(I
Emitter–Base Breakdown Voltage(I
Collector Cutoff Current( V
Emitter Cutoff Current( V
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
LMBT6520LT1G
LMBT6520LT3G
A
= 25°C
Device
Rating
Characteristic
Marking
A
EB
= 25°C
2 Z
2 Z
CB
= –4.0V )
= –250V )
Symbol
V
V
V
E
I
I
CEO
CBO
EBO
B
C
= –10 A)
E
(T
= –100 A )
A
C
10000/Tape&Reel
= –1.0 mA )
= 25°C unless otherwise noted.)
3000/Tape&Reel
Shipping
Value
–350
–350
–250
–500
–5.0
Symbol
T
J
R
R
P
P
, T
D
D
JA
JA
stg
mAdc
Unit
Vdc
Vdc
Vdc
mA
–55 to +150
Symbol
V
V
V
Max
225
300
417
1.8
556
2.4
I
I
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
LESHAN RADIO COMPANY, LTD.
mW/°C
mW/°C
°C/W
°C/W
–350
–350
Unit
–5.0
mW
mW
Min
°C
LMBT6520LT1G
1
BASE
Max
–50
–50
1
SOT–23
2
Unit
Vdc
Vdc
Vdc
nA
nA
3
COLLECTOR
2
EMITTER
3
1/6

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LMBT6520LT1G Summary of contents

Page 1

... Total Device Dissipation Alumina Substrate, ( 25°C A Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT6520LT1G = 2Z ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I Collector–Base Breakdown Voltage(I Emitter–Base Breakdown Voltage(I Collector Cutoff Current – ...

Page 2

... V CE(sat) — — — — V BE(sat) — — — V — BE(on — — eb LMBT6520LT1G Max Unit — — — 200 200 — Vdc –0.30 –0.35 –0.50 –1.0 Vdc –0.75 –0.85 –0.90 –2.0 Vdc 200 MHz 6.0 pF 100 pF 2/6 ...

Page 3

... T = 25°C J 500 300 200 100 1 100 200 LMBT6520LT1G T = 25° MHz 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA 25°C to 125°C for V VC CE(sat) –55°C to 25°C – ...

Page 4

... FOR V = 100 V CE(off 1.0 k 1/2MSD7000 APPROXIMATELY (ADJUST FOR V –1.35 V Figure 8. Switching Time Test Circuit Z = r(t) • R qJC( r(t) • R qJA(t) 5 100 200 t, TIME (ms) Figure 9. Thermal Response LMBT6520LT1G 70 100 50 SAMPLING SCOPE 50 = 2.0 V) (BE)off T – qJC J(pk) C (pk) qJC(t) T – qJA J(pk) A (pk) qJA(t) 500 1 ...

Page 5

... FIGURE 1/f t DUTY CYCLE = PEAK PULSE POWER = P Design Note: Use of Transient Thermal Resistance Data LESHAN RADIO COMPANY, LTD. LMBT6520LT1G 5/6 ...

Page 6

... MIN A 0.1102 B 0.0472 C 0.0350 D 0.0150 G 0.0701 H 0.0005 J 0.0034 J K 0.0140 L 0.0350 S 0.0830 V 0.0177 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.079 2.0 0.031 inches 0.8 mm LMBT6520LT1G MILLIMETERS MAX MIN MAX 0.1197 2.80 3.04 0.0551 1.20 1.40 0.0440 0.89 1.11 0.0200 0.37 0.50 0.0807 1.78 2.04 0.0040 0.013 0.100 0.0070 0.085 0.177 0.0285 0.35 0.69 0.0401 0.89 1.02 0.1039 2.10 2.64 0.0236 ...

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