LMBT2222AWT1G Leshan Radio Company, LMBT2222AWT1G Datasheet

no-image

LMBT2222AWT1G

Manufacturer Part Number
LMBT2222AWT1G
Description
Preliminary Information General Purpose Transistors Npn Silicon Lmbt2222awt1g
Manufacturer
Leshan Radio Company
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LMBT2222AWT1G
Manufacturer:
ON
Quantity:
150 000
Part Number:
LMBT2222AWT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
Preliminary Information
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width<300 s, Duty Cycle<2.0%.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
LMBT2222AWT1G = P1
Collector–Emitter Breakdown Voltage (1)
(I
Collector–Base Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Base Cutoff Current
(V
Collector Cutoff Current
(V
purpose amplifier applications. They are
housed in the SOT–323/SC–70 package which
is designed for low power surface mount
applications.
Characteristic
Total Device Dissipation FR– 5 Board,
T
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
compliance with RoHS requirements.
A
C
C
E
CE
CE
These transistors are designed for general
= 25°C
= 10 Adc, I
= 10 Adc, I
= 1.0 mAdc, I
We declare that the material of product
= 60 Vdc, V
= 60 Vdc, V
Rating
Characteristic
C
E
B
= 0)
= 0)
EB
EB
= 0)
= 3.0 Vdc)
= 3.0 Vdc)
Symbol
V
V
V
I
CEO
CBO
EBO
C
(T
A
= 25°C unless otherwise noted.)
Value
600
6.0
40
75
Symbol
T
Symbol
V
V
V
J
R
P
, T
I
(BR)CEO
(BR)CBO
(BR)EBO
D
I
JA
CEX
BL
stg
1
BASE
mAdc
Unit
Vdc
Vdc
Vdc
–55 to +150
Max
150
833
Min
6.0
75
3
COLLECTOR
40
LESHAN RADIO COMPANY, LTD.
2
EMITTER
°C/W
Unit
mW
°C
LMBT2222AWT1G
Max
20
10
CASE 419–02, STYLE 3
1
SOT–323 /SC – 70
nAdc
nAdc
Unit
2
Vdc
Vdc
Vdc
3
1/3

Related parts for LMBT2222AWT1G

LMBT2222AWT1G Summary of contents

Page 1

... Collector Current — Continuous I THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board 25°C A Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT2222AWT1G = P1 ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage ( 1.0 mAdc Collector–Base Breakdown Voltage ...

Page 2

... BE(sat 1 1.0 kHz – 0.5 Vdc mAdc 150 mAdc Shipping 3000/Tape&Reel 10000/Tape&Reel LMBT2222AWT1G Min Max 35 –– 50 –– 75 –– 100 — 40 –– –– 0.3 –– 1.0 0.6 1.2 –– 2.0 300 –– MHz T – ...

Page 3

... SC−70 (SOT−323) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM 0.65 0.025 1.9 0.075 mm SCALE 10:1 inches LMBT2222AWT1G MILLIMETERS INCHES MIN NOM MAX MIN NOM 0.80 0.90 1.00 0.032 0.035 0.00 0.05 0.10 0.000 0.002 0.7 REF 0.028 REF 0.30 0.35 0.40 0.012 0.014 0.10 0.18 0.25 ...

Related keywords