MB82D01181E Fujitsu Microelectronics, Inc., MB82D01181E Datasheet - Page 9

• Manufacturer Part Number: MB82D01181E
• Description: 16 Mbit 1 M Word ?? 16 Bit Mobile Phone Application Specific Memory
• Manufacturer: Fujitsu Microelectronics, Inc.

(3) Power Down Parameters
* : Applicable also to power-up.
(4) Other Timing Parameters
*1: Some data might be written into any address location if t
*2: The Input Transition Time (t
(5) AC Test Conditions
(6) AC Measurement Output Load Circuit
CE2 Low Setup Time for Power Down Entry
CE2 Low Hold Time after Power Down Entry
CE1 High Hold Time following CE2 High
after Power Down Exit
CE1 High Setup Time following CE2 High
after Power Down Exit
CE1 High to OE Invalid Time for Standby Entry
CE1 High to WE Invalid Time for Standby Entry
CE2 Low Hold Time after Power-up
CE1 High Hold Time following CE2 High after Power-up
Input Transition Time
Input High Level
Input Low level
Input Timing Measurement Level
Input Transition Time
violate AC specifications of some timing parameters.
Parameter
Parameter
Parameter
T
) at AC testing is 5 ns as shown in below. If actual t
V
V
DD
SS
0.1 F
Symbol
V
V
V
t
REF
T
IH
IL
Between V
Device
Under
Test
Conditions
Symbol
t
t
t
t
C2LP
CHH
CHS
CSP
Symbol
CHWX
⎯
⎯
⎯
IL
t
t
t
CHWX
t
CHOX
C2LH
CHH
and V
t
T
V
(Min) is not satisfied.
DD
IH
0.5 V
Min
300
10
80
50
50 pF
0
Min
300
10
10
50
Measured Value
1
MB82D01181E
Value
OUT
V
V
V
Value
DD
DD
DD
T
5
× 0.8
× 0.2
× 0.5
is longer than 5 ns, it may
Max
⎯
⎯
⎯
⎯
Max
25
⎯
⎯
⎯
⎯
Unit
Unit
ns
ns
µs
ns
ns
V
V
V
Unit
ns
ns
µs
µs
ns
Note
Note
Note
*
-60L
*1
*2
9