BULD85KC Power Innovations Limited, BULD85KC Datasheet - Page 4

• Manufacturer Part Number: BULD85KC
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
P R O D U C T
4
0·01
1·0
0·1
10
1·0
t
t
t
DC Operation
p
p
p
0·001
= 100 µs
=
= 10 ms
0·01
1·0
0·1
10
MAXIMUM FORWARD-BIAS
1 ms
V
SAFE OPERATING AREA
CE
-4
60%
40%
20%
10%
0%
- Collector-Emitter Voltage - V
10
I N F O R M A T I O N
Figure 4.
10
-3
MAXIMUM SAFE OPERATING REGIONS
THERMAL RESPONSE JUNCTION TO AMBIENT
100
10
-2
THERMAL INFORMATION
T
C
= 25°C
LDX85CFB
POWER PULSE DURATION
t1 - Power Pulse Duration - s
1000
10
Figure 6.
-1
T
Read time at end of t1,
vs
duty cycle = t1/t2
J max
10
8
6
4
2
0
10
0
–
0
T
A
100
=
P
V
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
CE
D peak
200
- Collector-Emitter Voltage - V
10
1
300
Figure 5.
R
Z
400
JA
JA
t1
10
t2
500
2
R
T
JA max
A
I
V
T
LDX85CZA
= 25°C
B(on)
600
C
BE(off)
= 25°C
= I
= -5 V
10
700
LDX85CRB
C
3
/ 5
800