SG615 EPSON Electronics, SG615 Datasheet - Page 2

• Manufacturer Part Number: SG615
• Description: SOJ High Frequency Crystal Oscillator
• Manufacturer: EPSON Electronics

3.3
Output frequency range
Power source
voltage
Temperature
range
Soldering condition (lead part)
Frequency stability
Current consumption
Output disable current
Output disable current
Duty
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
Output
rise time
Output
fall time
Oscillation start up time
Aging
Shock resistance
5
V±0.5 V
V±0.3 V
Specifications (characteristics)
Operating condition and Frequency band
Operating condition
Frequency stability:M
Frequency stability:B
Frequency stability:C
Frequency stability:B
Frequency stability:C
Item
( -40 to +85 °C)
( -20 to +70 °C)
( -20 to +70 °C)
( -20 to +70 °C)
( -20 to +70 °C)
Storage temperature
Operating temperature
C-MOS level
TTL level
Max. supply voltage
Operating voltage
C-MOS level
TTL level
C-MOS level
TTL level
V
Symbol
DD
T
∆f/f
S.R.
T
T
tw/t
V
V
t
t
t
Iop
Io
V
I
V
V
-GND
C
OSC
OPR
TLH
THL
fa
f
STG
SOL
ST
DD
OH
OL
0
IH
IL
L
E
0
1 MHz
1.025
1.025
SG-615PTW/STW
Twice at under 260
55.0001 MHz to 135.0000 MHz
40 % to 60 %
4 ns Max.
4 ns Max.
SG-615P
SG-615P
—
—
—
-20 °C to +70 °C
45 mA Max.
30 mA Max.
0.8 V Max.
5.0 V ±0.5 V
2.0 V Min.
B: ±50 x 10
26
26
26
26
26
° C
SG-615PTJ/PH
SG-615PTJ/PH
SG-615PHW/SHW
±5 x 10
within 10 s or under 230
-55 °C to +125 °C
-0.5 V to +7.0 V
Specifications
M: ±100 x 10
±20 x 10
V
10 ms Max.
50 µA Max.
DD
15 pF Max.
0.4 V Max.
4 ns Max.
4 ns Max.
-6
-0.4 V Min.
-6
50 MHz
—
—
/year Max.
-6
C: ±100 x 10
Max.
55
-6
66.667
40 % to 60 %
SG-615PCW/SCW
26.0001 MHz to
—
-6
-40 °C to +85 °C
° C
28 mA Max.
16 mA Max.
0.7 V
0.2 V
135.0000 MHz
3.3 V ±0.3 V
4 ns Max.
4 ns Max.
within 3 min.
SG-615PTW/STW/PHW/SHW
SG-615PTW/STW/PHW/SHW
SG-615PCW/SCW
SG-615PCW/SCW
SG-615PCW/SCW
—
—
DD
DD
Min.
Min.
100 MHz
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
sine wave in 3 directions
I
OH
I
OL
C-MOS load: 20 %→80 % V
C-MOS load: 80 %→20 % V
= -16
= -16
TTL load: 0.4 V→2.4 V
TTL load: 2.4 V→0.4 V
Time at 4.5 V to be 0 s
Ta=+25 °C, V
C-MOS load: 1/2V
m
No load condition
m
-20 °C to +70 °C
Actual size
40 °C to +85 °C
TTL load: 1.4 V
A (*TW/HW)/-8 mA(
A (*TW/HW)/8 mA(
Remarks
OE=GND
ST=GND
Crystal oscillator
OE,ST
OE,ST
DD
=5 V
2
DD
x 0.3 ms x 1/2
*CW)
*CW)
135
135
135
135
135
150 MHz
DD
DD
34