GP200MLS12 Dynex Semiconductor, GP200MLS12 Datasheet
GP200MLS12
Related parts for GP200MLS12
GP200MLS12 Summary of contents
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... The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module incoporates high current rated freewheel diodes ...
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... GP200MLS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... 15V 200A 15V 200A 125˚ case 1ms 200A 200A 125˚C F case I = 200A 200A 125˚C F case V = 25V 0V 1MHz GP200MLS12 Min. Typ. Max. Units - - 4 6.5 - 2.7 3 3.2 4 200 400 A - 2.2 2 ...
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... GP200MLS12 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge - rr freewheel diode T = 125˚C unless stated otherwise ...
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... 6 4 150 200 0 - (A) C Fig. 6 Typical turn-off energy vs collector current GP200MLS12 V = 20/15/12/10V ge = 125˚C case 1.0 2.0 3.0 4.0 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 15V = 600V 100 150 Collector current ( ...
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... GP200MLS12 ±15V 900V case 100 Collector current, I Fig. 7 Freewheel diode typical turn-off energy vs collector current 400 T = 25˚C j 350 300 250 200 150 100 0.5 1 1.5 2 Forward voltage, V Fig. 9 Freewheel diode typical forward characteristics 6/10 Caution: This device is sensitive to electrostatic discharge ...
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... Fig current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 100 10 1 0.001 1000 1200 800 - (V) ce Fig. 12 Transient thermal impedance 80 90 100 110 120 130 - (˚C) case GP200MLS12 Antiparallel diode Transistor 0.01 0.1 1 Pulse width ( 7/10 ...
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... GP200MLS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
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... Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLS12 Application Note Number AN4502 AN4503 AN4504 ...
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... GP200MLS12 HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...