BAV23C-V Vishay, BAV23C-V Datasheet - Page 2

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BAV23C-V

Manufacturer Part Number
BAV23C-V
Description
Small Signal Switching Diode, Dual
Manufacturer
Vishay
Datasheet
BAV23C-V
Vishay Semiconductors
Thermal Characteristics
T
Note:
1)
Electrical Characteristics
T
Package Dimensions
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Reverse breakdown voltage
Forward voltage
Reverse current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
amb
amb
Device on fiberglass substrate
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Parameter
Parameter
0.45 (0.018)
0.35 (0.014)
0.9 (0.035)
1 (0.039)
0.45 (0.018)
0.35 (0.014)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
2.8 (0.110)
3.1 (0.122)
in millimeters (inches)
I
F
I
V
= I
R
R
= 100 µA, t
R
V
= 200 V, T
0.9 (0.035)
R
= 30 mA, R
Test condition
1 (0.039)
I
I
V
F
F
I
= 0, f = 1 MHz
0.45 (0.018)
0.35 (0.014)
F
i
R
R
= 100 mA
= 200 mA
= 10 mA
= 3 mA
= 200 V
Test condition
p
j
= 150 °C
= 300 µs
L
= 100 Ω
: SOT-23
Symbol
V
C
V
V
(BR)
I
I
t
Foot print recommendation:
r
R
R
rr
F
F
f
D
T
0.550 ref. (0.022 ref.)
Symbol
j
R
= T
thJA
T
j
stg
0.3 (0.012)
0.5 (0.020)
0.95 (0.037)
DiodesEurope@vishay.com
Min.
250
- 65 to + 150
2.35 (0.093)
2.6 (0.102)
357
Value
Typ.
150
5
0.7 (0.028)
1)
0.95 (0.037)
Document Number 81902
Max.
1000
1250
100
100
50
5
Rev. 1.1, 12-Aug-10
K/W
Unit
°C
°C
Unit
mV
mV
nA
µA
pF
ns
Ω
V

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