BAV23C-V-G Vishay, BAV23C-V-G Datasheet - Page 2

• Manufacturer Part Number: BAV23C-V-G
• Description: Small Signal Switching Diode, Dual
• Manufacturer: Vishay

BAV23C-V-G
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Package Dimensions
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Reverse breakdown voltage
Forward voltage
Reverse current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Parameter
Parameter
0.45 (0.018)
0.35 (0.014)
0.9 (0.035)
1 (0.039)
[e-mail], [e-mail],
0.45 (0.018)
0.35 (0.014)
For technical questions within your region, please contact one of the following:
in millimeters (inches)
2.8 (0.110)
3.1 (0.122)
I
F
I
V
= I
R
R
= 100 µA, t
R
V
= 200 V, T
R
= 30 mA, R
Test condition
I
I
V
F
F
I
= 0, f = 1 MHz
F
i
Device on fiberglass substrate
0.9 (0.035)
R
R
1 (0.039)
= 100 mA
= 200 mA
= 10 mA
= 3 mA
0.45 (0.018)
= 200 V
0.35 (0.014)
p
j
= 150 °C
Test condition
= 300 µs
L
= 100 Ω
: SOT-23
Symbol
V
C
V
V
(BR)
I
I
t
r
R
R
rr
F
F
f
D
Foot print recommendation:
0.550 ref. (0.022 ref.)
T
Symbol
[e-mail]
R
j
= T
0.5 (0.020)
0.3 (0.012)
thJA
T
Min.
250
0.95 (0.037)
j
stg
2.35 (0.093)
2.6 (0.102)
Typ.
- 65 to + 150
5
Value
357
150
0.7 (0.028)
0.95 (0.037)
Document Number 85866
Max.
1000
1250
100
100
50
5
Rev. 1.1, 12-Aug-10
Unit
K/W
°C
°C
Unit
mV
mV
nA
µA
pF
ns
Ω
V