TISP3210H3SL Power Innovations Limited, TISP3210H3SL Datasheet

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TISP3210H3SL

Manufacturer Part Number
TISP3210H3SL
Description
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Manufacturer
Power Innovations Limited
Datasheet
Copyright © 1999, Power Innovations Limited, UK
description
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground.
Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or
conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP3xxxH3SL range consists of eleven voltage variants to meet various maximum system voltage
levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic
package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A
10/1000 TISP3xxxF3SL series is available.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and
matched breakover control and are virtually transparent to the system in normal operation.
WAVE SHAPE
Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
Rated for International Surge Wave Shapes
- Guaranteed -40 °C to +85 °C Performance
DEVICE
10/1000 µs
10/160 µs
10/700 µs
10/560 µs
‘3070
‘3080
‘3095
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
2/10 µs
8/20 µs
TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
V
100
110
120
145
160
190
220
275
GR-1089-CORE
GR-1089-CORE
DRM
58
65
75
IEC 61000-4-5
V
ITU-T K20/21
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
FCC Part 68
FCC Part 68
FCC Part 68
I N F O R M A T I O N
STANDARD
V
125
135
145
180
210
250
290
350
(BO)
70
80
95
V
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
I
500
300
250
200
160
100
TSP
A
device symbol
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height. . . . . . . . . . . . . . . . . . . . .8.3 mm
Low Differential Capacitance
- Value at -2 V/-50 V Bias. . . . . . . .67 pF max.
TISP3250H3SL THRU TISP3350H3SL
G
R
T
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SL PACKAGE
T
(TOP VIEW)
1
2
3
JANUARY 1999 - REVISED MAY 1999
G
SD3XAA
R
MDXXAG
1

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TISP3210H3SL Summary of contents

Page 1

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1999, Power Innovations Limited, UK TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages V V DRM (BO) DEVICE V V ‘3070 58 70 ‘3080 65 80 ‘3095 75 95 ‘3125 ...

Page 2

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 absolute maximum ratings, T Repetitive peak off-state voltage, (see Note 1) Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µ ...

Page 3

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS electrical characteristics for the R and and G terminals, T PARAMETER Repetitive peak off DRM D state current V Breakover voltage dv/dt = ±750 V/ms, R (BO) dv/dt Impulse breakover Maximum ramp value = ±500 V V (BO) voltage di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ± ...

Page 4

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 electrical characteristics for the R and T terminals, T PARAMETER Repetitive peak off DRM D state current V Breakover voltage dv/dt = ±750 V/ms, R (BO) dv/dt Impulse breakover Maximum ramp value = ±500 V ...

Page 5

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS PARAMETER MEASUREMENT INFORMATION V DRM -v I DRM I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIRS TISP3250H3SL THRU TISP3350H3SL ...

Page 6

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 200 ...

Page 7

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NORMALISED CAPACITANCE vs OFF-STATE VOLTAGE 1 0.9 0.8 0.7 0.6 0.5 '3070 THRU '3095 0.4 0.3 '3125 THRU '3210 '3250 THRU '3350 0.2 0 Off-state Voltage - V D Figure TYPICAL CHARACTERISTICS ...

Page 8

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 NON-REPETITIVE PEAK ON-STATE CURRENT V DERATING FACTOR DRM vs MINIMUM AMBIENT TEMPERATURE 1.00 0.99 0.98 0.97 '3070 THRU '3095 0.96 0.95 '3125 THRU '3210 0.94 '3250 THRU '3350 0.93 -40 -35 -30 -25 -20 -15 ...

Page 9

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS impulse testing To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values. PEAK VOLTAGE ...

Page 10

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 normal system voltage levels The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about clipping is normally possible without activating the ring trip circuit ...

Page 11

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS SL003 3-pin plastic single-in-line package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic com- pound. The compound will withstand soldering temperature with no deformation, and circuit performance charac- teristics will remain stable when operated in high humidity conditions ...

Page 12

... TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current ...

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