T3055EL Motorola, T3055EL Datasheet

T3055EL

Manufacturer Part Number

T3055EL

Description

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Manufacturer

Motorola

Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Medium Power Field Effect Transistor

N–Channel Enhancement Mode

Silicon Gate TMOS E–FET

SOT–223 for Surface Mount

withstand high energy in the avalanche and commutation modes.

This device is also designed with a low threshold voltage so it is

fully enhanced with 5 Volts. This new energy efficient device also

offers a drain–to–source diode with a fast recovery time. Designed

for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients. The device is

housed in the SOT–223 package which is designed for medium

power surface mount applications.

(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.

TMOS is a registered trademark of Motorola, Inc.

E–FET is a trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

MAXIMUM RATINGS

DEVICE MARKING

THERMAL CHARACTERISTICS

Motorola TMOS Power MOSFET Transistor Device Data

Drain–to–Source Voltage

Gate–to–Source Voltage — Continuous

Drain Current — Continuous

Drain Current

Total Power Dissipation @ T A = 25 C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C

3055L

Thermal Resistance — Junction–to–Ambient (surface mounted)

Maximum Temperature for Soldering Purposes,

This advanced E–FET is a TMOS power MOSFET designed to

Motorola, Inc. 1995

Silicon Gate for Fast Switching Speeds

Low Drive Requirement to Interface Power Loads to Logic

Level ICs, V GS(th) = 2 Volts Max

Low R DS(on) — 0.18

The SOT–223 Package can be Soldered Using Wave or Re-

flow. The Formed Leads Absorb Thermal Stress During Sol-

dering, Eliminating the Possibility of Damage to the Die

Available in 12 mm Tape and Reel

Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.

Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.

Derate above 25 C

(V DD = 25 V, V GS = 5 V, Peak I L = 1.5 A, L = 0.2 mH, R G = 25 )

Time in Solder Bath

— Pulsed

(T A = 25 C unless otherwise noted)

max

Rating

Symbol

T J , T stg

P D (1)

R JA

V GS

V DS

E AS

I DM

T L

2,4

I D

– 65 to 150

LOGIC LEVEL TMOS FET

Value

MMFT3055EL

CASE 318E–04, STYLE 3

178

156

260

R DS(on) = 0.18 OHM

1.5

0.8

6.4

Motorola Preferred Device

MEDIUM POWER

60 VOLTS

TO–261AA

1.5 AMP

Order this document

by MMFT3055EL/D

mW/ C

Watts

Unit

Vdc

Adc

Sec

C/W

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