MAC08DT1 Motorola, MAC08DT1 Datasheet

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MAC08DT1

Manufacturer Part Number
MAC08DT1
Description
TRIAC 0.8 AMPERE RMS 200 thru 600 Volts
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SOT 223 Triac
Silicon Bidirectional Thyristors
industrial or consumer applications. Supplied in surface mount package for use in
automated manufacturing.
Preferred devices are Motorola recommended choices for future use and best overall value.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1. V DRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
REV 1
3–40
Peak Repetitive Blocking Voltage (1)
On-State Current RMS (T C = 80 C)
Peak Non-repetitive Surge Current
Peak Non-repetitive Surge Current
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power (t < 2.0 s)
Average Gate Power (T C = 80 C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Tab
Thermal Resistance, Junction to Tab
Designed for use in solid state relays, MPU interface, TTL logic and other light
voltage ratings of the devices are exceeded.
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
(1/2 Sine Wave, Gate Open, T J = 25 to 110 C)
(One Full Cycle, 60 Hz, T C = 25 C)
(One Full Cycle, 60 Hz, T C = 25 C)
PCB Mounted per Figure 1
PCB Mounted per Figure 1
Measured on Anode Tab Adjacent to Epoxy
Measured on Anode Tab Adjacent to Epoxy
(T J = 25 C unless otherwise noted)
Characteristic
Rating
MAC08BT1
MAC08DT1
MAC08MT1
I T(RMS)
Symbol
Symbol
P G(AV)
V DRM
I TSM
I TSM
R JA
R JA
P GM
R JT
R JT
T stg
I 2 t
T J
T L
Motorola Thyristor Device Data
MAC08BT1
*Motorola preferred devices
–40 to +150
–40 to +110
0.8 AMPERE RMS
200 thru 600 Volts
Value
Max
Series
200
400
600
260
156
156
0.8
0.4
5.0
0.1
CASE 318E-04
10
10
25
25
(SOT-223)
STYLE 11
TRIAC
*
Amps
Amps
Amps
Watts
Watts
Volts
Unit
Unit
A 2 s
C/W
C/W
C/W
C/W
C
C
C

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MAC08DT1 Summary of contents

Page 1

... V DRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 3–40 Symbol V DRM MAC08BT1 MAC08DT1 MAC08MT1 I T(RMS) I TSM I TSM G(AV) ...

Page 2

... Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 Motorola Thyristor Device Data Symbol I DRM dv/dt c dv/dt dv/dt 0.244 6.2 inches BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. 0.059 mm BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. ...

Page 3

... MAXIMUM DEVICE MOUNTED ON L FIGURE 1 AREA = PCB WITH TAB AREA AS SHOWN 4.0 6.0 8.0 FOIL AREA ( 180 120 CONDUCTION ANGLE 0.2 0.3 0.4 0.5 0 180 90 120 CONDUCTION ANGLE 0.2 0.3 0.4 0.5 0.6 0.7 I T(RMS) , ON-STATE CURRENT (AMPS) Figure 7. Current Derating Reference: MT2 Tab Motorola Thyristor Device Data 10 0.7 0.8 ...

Page 4

... (di dt) V DRM c 1000 1.0 1.0 di/ RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Motorola Thyristor Device Data 1.0 0 0.01 0.6 0.7 0.8 0.0001 0.001 Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board 80 mHY L L MEASURE I 2 ...

Page 5

... Figure 14. Typical Gate Trigger Current Variation 1.1 0 100 –40 –20 Figure 16. Gate Trigger Voltage Variation I GT3 I GT2 I GT4 100 JUNCTION TEMPERATURE ( C) V GT3 V GT4 V GT2 V GT1 100 JUNCTION TEMPERATURE ( C) Motorola Thyristor Device Data ...

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