MAC4SM ON Semiconductor, MAC4SM Datasheet - Page 2

• Manufacturer Part Number: MAC4SM
• Description: SENSITIVE GATE TRIACS
• Manufacturer: ON Semiconductor

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(1) Pulse Test: Pulse Width
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Blocking Current
Peak On-State Voltage (1)
Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 )
Holding Current
Latching Current (V D = 12 V, I G = 10 mA)
Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 100 )
Rate of Change of Commutating Current
Critical Rate of Rise of Off-State Voltage
Repetitive Critical Rate of Rise of On-State Current
(V D = Rated V DRM , V RRM ; Gate Open)
(I TM = 6.0 A)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(V D = 12 V, Gate Open, Initiating Current = 200 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(V D = 400 V, I TM = 3.5 A, Commutating dv/dt = 10 V/ s, Gate Open,
T J = 125 C, f = 500 Hz, C L = 5.0 F, L L = 20 mH, No Snubber)
(V D = 0.67 x Rated V DRM , Exponential Waveform,
Gate Open, T J = 125 C)
IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/ sec; f = 60 Hz
— Junction to Ambient
2.0 ms, Duty Cycle
Characteristic
Characteristic
(T J = 25 C unless otherwise noted; Electricals apply in both directions)
2%.
MAC4SM, MAC4SN
http://onsemi.com
T J = 25 C
T J = 125 C
2
Symbol
(di/dt) c
I DRM ,
I RRM
dv/dt
V TM
V GT
di/dt
I GT
I H
I L
Min
2.9
2.9
2.9
2.0
0.5
0.5
0.5
3.0
50
—
—
—
—
—
—
—
Symbol
R JC
R JA
T L
Typ
150
1.3
4.0
4.7
6.0
5.0
6.0
6.0
0.7
.65
0.7
4.0
15
—
—
—
Value
62.5
260
2.2
Max
0.01
2.0
1.6
1.3
1.3
1.3
10
10
10
15
30
30
30
—
—
10
A/ms
Unit
Unit
V/ s
A/ s
C/W
mA
mA
mA
mA
V
V
C