MMBT3906-HF Comchip Technology Corporation, MMBT3906-HF Datasheet

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MMBT3906-HF

Manufacturer Part Number
MMBT3906-HF
Description
Pnp Transistor
Manufacturer
Comchip Technology Corporation
Datasheet
Electrical Characteristics (at T
MMBT3906-HF
RoHS Device
Maximum Ratings(at T
QW-HTR01
General Purpose Transistor
General Purpose Transistor
Features
Emitter-Base breakdown voltage
Emitter cut-off current
DC current gain
Delay time
Rise time
Fall time
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector dissipatioin
Storage temperature and junction temperature
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Storage time
-Halogen Free
-Epitaxial planar die construction
-As complementary type, the NPN
transistor MMBT3906-HF is recommended
Base
1
Parameter
Parameter
Collector
Emitter
3
2
A
=25
O
A
C unless otherwise noted)
I
I
I
I
I
I
I
V
V
V
V
V
V
f=100MH
V
V
C
C
E
C
C
C
B1
=25
(PNP)
CB
CE
EB
CE
CE
CE
CC
CC
=-50mA , I
=-50mA , I
=-10mA , I
=-100μA , I
=-100μA , I
=-1mA , I
=I
=-5V , I
=-40V , I
=-40V , I
=-1V , I
=-1V , I
=-20V , I
=-3.0V , V
=-3.0V
B2
=-1.0mA
Conditions
Z
Symbol
dc
T
STG
C
C
C
O
B
B1
V
V
V
B
B
=0
=-10mA
=-50mA
C unless otherwise noted)
=0
E
B
C
, I
P
CBO
CEO
C
=-5mA
=-5mA
EBO
I
E
BE
=-1.0mA
=0
=0
=-10mA
C
C
C
=0
=0
, T
=-10mA
=-0.5V
J
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
Symbol
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
h
h
CE
BE
Min
I
I
Dimensions in inches and (millimeter)
I
CBO
CEO
-55
EBO
FE(1)
FE(2)
f
td
ts
tr
tf
(sat)
(sat)
T
0.020 (0.50)
0.013 (0.35)
1
SOT-23
0.083 (2.10)
0.066 (1.70)
0.119 (3.00)
0.110 (2.80)
Min
Typ
100
250
-40
-40
60
-5
3
0.006 (0.15) max
0.007 (0.20) min
2
SMD Diodes Specialist
0.103 (2.60)
0.086 (2.20)
Max
Max
0.006 (0.15)
0.002 (0.05)
-0.95
+150
-0.2
-0.3
-0.1
-0.1
-0.1
300
225
-40
-40
0.3
35
35
75
-5
Unit
Unit
Mhz
µA
µA
µA
nS
nS
nS
nS
°C
W
V
V
V
A
V
V
V
V
V
Page 1
REV:A

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MMBT3906-HF Summary of contents

Page 1

... General Purpose Transistor General Purpose Transistor MMBT3906-HF RoHS Device Features -Halogen Free -Epitaxial planar die construction -As complementary type, the NPN transistor MMBT3906-HF is recommended Collector 3 1 Base 2 Emitter Maximum Ratings(at T =25 A Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Collector dissipatioin ...

Page 2

... General Purpose Transistor General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3906-HF) Fig.1 Capacitance 10 Cobo 5 Cibo 1 0.1 1 Reverse bias (V) Fig Turn-On Time 500 100 10 td@Vo = Collector current (mA) Figure 5 5 Source resistance=200Ω IC=1.0mA 4 Source resistance=200Ω I =0.5mA C 3 Source resistance=2.0KΩ ...

Page 3

General Purpose Transistor General Purpose Transistor h Parameters (V =-10V CE dc Fig.7 Current gain 300 200 100 0.1 1 Collector current (mA) C Fig. 9- Input impedance 20 10 1.0 0.2 1.0 0.1 Ic ...

Page 4

General Purpose Transistor General Purpose Transistor Reel Taping Specification Trailer End ....... 10 pitches (min) A SYMBOL (mm) SOT-23 3.10 ± 0.10 (inch) 0.122 ± 0.004 SYMBOL E SOT-23 (mm) 1.75 ± 0.10 (inch) 0.069 ...

Page 5

... General Purpose Transistor General Purpose Transistor Marking Code Marking Code Park Number 2A MMBT3906-HF Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.65 0.025 C 1.90 0.075 D 2.02 0.080 E 3.03 0.120 Standard Package Qty per Reel Reel Size Case Type (Pcs) 3000 SOT-23 QW-HTR01 (inch) 7 Comchip Technology CO., LTD. ...

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