MMBTH10L ON Semiconductor, MMBTH10L Datasheet - Page 2
MMBTH10L
Manufacturer Part Number
MMBTH10L
Description
Vhf/uhf Transistor Npn Silicon
Manufacturer
ON Semiconductor
Datasheet
1.MMBTH10L.pdf
(6 pages)
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ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Common−Base Feedback Capacitance
Collector Base Time Constant
(I C = 1.0 mAdc, I B = 0)
(I C = 100 Adc, I E = 0)
(I E = 10 Adc, I C = 0)
(V CB = 25 Vdc, I E = 0)
(V EB = 2.0 Vdc, I C = 0)
(I C = 4.0 mAdc, V CE = 10 Vdc)
(I C = 4.0 mAdc, I B = 0.4 mAdc)
(I C = 4.0 mAdc, V CE = 10 Vdc)
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(I C = 4.0 mAdc, V CB = 10 Vdc, f = 31.8 MHz)
Characteristic
(T A = 25 C unless otherwise noted)
MMBTH10LT1, MMBTH10−4LT1
MMBTH10−4LT1
MMBTH10−4LT1
MMBTH10LT1
MMBTH10LT1
http://onsemi.com
2
V (BR)CEO
V (BR)CBO
V (BR)EBO
V CE(sat)
Symbol
I CBO
I EBO
rb C c
V BE
h FE
C cb
C rb
f T
Min
120
650
800
3.0
25
30
60
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.95
0.65
100
100
240
0.5
0.7
9.0
−
−
−
−
−
−
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ps
−