MMBTH10L-X-AE3-R Unisonic Technologies, MMBTH10L-X-AE3-R Datasheet - Page 2

• Manufacturer Part Number: MMBTH10L-X-AE3-R
• Description: Rf Transistor Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBTH10
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Current Gain Bandwidth Product
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation
Collector current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
ABSOLUTE MAXIMUM RATING
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
V
BV
BV
BV
60-100
CE(SAT)
I
I
BE(ON)
C
h
CBO
EBO
f
FE
A
CBO
CEO
T
EBO
ob
(Ta=25℃)
I
I
I
I
V
V
V
V
V
V
C
C
E
C
CE
CB
EB
CE
CB
CE
=10µA
=100µA
=1mA
=4mA, I
(Ta=25℃, unless otherwise specified)
=2V
=10V, I
=25V
=10V, I
=10V, f=1MHZ
=10V, I
TEST CONDITIONS
B
=400µA
C
C
C
=4mA
=4mA
=4mA, f=100MHz
SYMBOL
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
C
J
90-130
B
NPN SILICON TRANSISTOR
MIN
650
-55 ~ +150
RATINGS
30
25
60
3
225
150
30
25
50
3
TYP
120-200
MAX
C
500
950
100
100
0.7
QW-R206-003,E
UNIT
mW
mA
UNIT
℃
℃
MHz
2 of 5
V
V
V
mV
mV
nA
nA
pF
V
V
V