T4312816A Taiwan Memory Technology, T4312816A Datasheet - Page 14

• Manufacturer Part Number: T4312816A
• Description: 8M x 16 SDRAM
• Manufacturer: Taiwan Memory Technology

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*note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
TMemory Technology Inc. reserves the right
to change products or specifications without notice.
2. Bank active & read/write are controlled by BA0 – BA1.
3. Enable and disable auto precharge function are controlled by A
4. A
10
CH
/AP and BA control bank precharge when precharge command is asserted.
TE
BA0 BA1
0
1
0
1
BA0
A
A10
0
1
0
1
0
1
10
0
0
0
0
1
/AP BA0 BA1
0
0
1
1
Disable (End of burst)
BA1
Enable (End of burst)
Enable read/write command for bank A .
Enable read/write command for bank B .
Enable read/write command for bank C .
Enable read/write command for bank D .
0
0
1
1
X
0
1
0
1
Auto-Precharge
X
0
0
1
1
Active & Read/Write
Bank A
Bnak D
Bnak B
Bank C
All Bamks
precharge
Bank A
Bank D
Bank B
Bank C
Operation
P.14
10
Preliminary T4312816A
/AP in read/wirte command.
Publication Date: APR. 2003
Revision: 0.B