ST110S International Rectifier, ST110S Datasheet - Page 2
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ST110S
Manufacturer Part Number
ST110S
Description
PHASE CONTROL THYRISTORS Stud Version
Manufacturer
International Rectifier
Datasheet
1.ST110S.pdf
(9 pages)
www.DataSheet4U.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
Switching
ST110S Series
On-state Conduction
2
t
t
I
I
I
I
V
V
r
r
V
I
I
di/dt
d
q
t
H
L
T(AV)
T(RMS)
TSM
2
t1
t2
Type number
ST110S
T(TO)1
T(TO)
TM
t
Previous Datasheet
2
Parameter
Parameter
Typical delay time
Typical turn-off time
Max. non-repetitive rate of rise
of turned-on current
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
Voltage
2
2
Code
t for fusing
04
08
12
14
16
t for fusing
V
peak and off-state voltage
DRM
/V
RRM
1200
1400
1600
, max. repetitive
400
800
V
ST110S
ST110S
2700
2830
2270
2380
1000
100
36.4
33.2
25.8
23.5
1.79
1.81
1.52
0.90
0.92
500
110
175
364
600
2.0
90
To Order
Index
KA
Units Conditions
KA
Units Conditions
A/µs
m
mA
°C
µs
A
A
V
A
V
2
2
s
s
Gate drive 20V, 20 , t
T
Gate current 1A, di
V
I
dv/dt = 20V/µs, Gate 0V 100
(16.7% x
(I >
T
180° conduction, half sine wave
DC @ 85°C case temperature
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 0.1 to 10ms, no voltage reapplied
I
(16.7% x
(I >
TM
pk
J
d
J
repetitive peak voltage
= T
= 350A, T
V
= 0.67% V
= 25°C, anode supply 12V resistive load
= 100A, T
RSM
J
x I
x I
max, anode voltage
T(AV)
T(AV)
, maximum non-
x I
x I
1300
1500
1700
),T
J
No voltage
reapplied
100% V
reapplied
No voltage
reapplied
100% V
reapplied
),T
500
900
J
DRM
V
T(AV)
T(AV)
= T
= T
Next Data Sheet
J
J
= T
, T
= T
J
J
< I <
g
< I <
max, t
J
max, di/dt = 10A/µs, V
/dt = 1A/µs
J
J
RRM
RRM
= 25°C
max.
max.
r
p
1µs
x I
x I
= 10ms sine pulse
Sinusoidal half wave,
Initial T
T(AV)
T(AV)
80% V
t
p
), T
), T
= 500µs
I
J
J
DRM
DRM
J
@ T
= T
= T
= T
/I
J
J
J
J
RRM
mA
max.
R
= T
20
max.
max.
= 50V
J
max.
max