MMBT2222A-G Comchip Technology Corporation, MMBT2222A-G Datasheet

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MMBT2222A-G

Manufacturer Part Number
MMBT2222A-G
Description
Small Signal Npn Transistor
Manufacturer
Comchip Technology Corporation
Datasheet
“-G” suffix designated RoHS compliant version
Small Signal Transistor (NPN)
MMBT2222A-G (RoHS Device)
Features
Mechanical Data
Mounting Pad Layout
Maximum Ratings & Thermal Characteristics
Notes:
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation
Thermal Resistance Junction
to Ambient Air
Junction Temperature
Storage Temperature Range
0.037 (0.95)
NPN Silicon Epitaxial Planar Transistor for
Case: SOT-23 Plastic Package
Weight approx: 0.008g
Switching and amplifier application.
(1) FR-5=1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x0.024 in. 99.5% alumina.
0.079 (2.0)
on FR-5 Board
Derate above 25ºC
on Alumina Substrate
Derate above 25ºC
0.035 (0.9)
FR-5 Board
Alumina Substrate
0.037 (0.95)
(1)
T
A
=25ºC
(2)
T
A
=25ºC
Symbol
V
V
V
R
.016(0.4)
P tot
P tot
.037 (0.95) .037 (0.95)
Rating at 25ºC ambient temperature unless otherwise specified.
CBO
CEO
EBO
T s
I
T j
C
B
JA
.122 (3.1)
.110 (2.8)
.016 (0.40)
C
.004 (0.1)
Dimensions in inches (millimeters)
E
-55 to +150
Value
SOT-23
600
225
300
556
417
150
6.0
1.9
2.4
75
40
.056 (1.43)
.052 (1.33)
Top View
.103 (2.6)
.086 (2.2)
mW/ºC
mW/ºC
ºC/mW
mmW
B: Base
C: Collector
E: Emitter
Unit
mW
mA
ºC
ºC
V
V
V

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MMBT2222A-G Summary of contents

Page 1

... Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) Features NPN Silicon Epitaxial Planar Transistor for Switching and amplifier application. Mechanical Data Case: SOT-23 Plastic Package Weight approx: 0.008g Mounting Pad Layout 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) Maximum Ratings & Thermal Characteristics Parameter Collector-Base Voltage ...

Page 2

... Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) Electrical Characteristics Parameter DC Current Gain Collector-Base Breakdown Voltage (1) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage Collector Cut-off Current Collector Cut-off Current Base Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product ...

Page 3

... Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) Electrical Characteristics Parameter Collector Base Time Constant Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2) Switching Time Equivalent Test Circuit Figure 1. Turn-ON Time 1.0 to 100 μs, DUTY CYCLE ≈ 2% ...

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