MCR218-10FP ON Semiconductor, MCR218-10FP Datasheet - Page 2

• Manufacturer Part Number: MCR218-10FP
• Description: Silicon Controlled Rectifier
• Manufacturer: ON Semiconductor

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(1) Pulse Test: Pulse Width = 1 ms, Duty Cycle
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On–State Voltage (1)
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Gate Non-Trigger Voltage
Holding Current
Turn-On Time
Turn-Off Time (V D = Rated V DRM ,
Critical Rate-of-Rise of Off-State Voltage
(V D = Rated V DRM , Gate Open)
(I TM = 16 A Peak)
(V AK = 12 Vdc, R L = 100 Ohms)
(V AK = 12 Vdc, R L = 100 Ohms)
(V AK = 12 Vdc, R L = 100 Ohms, T J = 125 C)
(V AK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
(I TM = 8 A, I GT = 40 mAdc)
I TM = 8 A, I R = 8 A)
(Gate Open, V D = Rated V DRM , Exponential Waveform)
Characteristic
Characteristic
(T C = 25 C unless otherwise noted.)
T J = 25 C
T J = 125 C
T J = 25 C
T J = 125 C
p
MCR218–6FP, MCR218–10FP
2%.
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2
Symbol
I DRM,
I RRM
V GD
dv/dt
V TM
V GT
I GT
t gt
I H
t q
Symbol
R CS
R JC
R JA
T L
Min
0.2
—
—
—
—
—
—
—
—
—
—
2.2 (typ)
Max
260
Typ
100
1.5
60
—
—
10
—
—
16
15
35
2
1
Max
1.8
1.5
10
25
—
30
—
—
—
—
2
Unit
C/W
C/W
C/W
C
Volts
Volts
Volts
Unit
V/ s
mA
mA
mA
A
s
s