MCR8S Motorola, MCR8S Datasheet - Page 2

• Manufacturer Part Number: MCR8S
• Description: Silicon Controlled Rectifiers
• Manufacturer: Motorola

(1) Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant
(2) Pulse test: P.W.
(3) Does not include R GK current.
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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MCR8S SERIES
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Peak Forward Blocking Current
Peak Reverse Blocking Current
ON CHARACTERISTICS
Peak On-State Voltage (I TM = 16 A) (2)
Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 ) (3)
Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 100 )
Hold Current (Anode Voltage =12 V)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
2
(V AK = Rated V DRM or V RRM , Gate Open) (1)
(V D = 67% of Rated V DRM , Exponential Waveform, T J = 110 C)
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
H
Q
Z
L
V
G
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
1 2 3
4
2ms, Duty Cycle
B
N
D
Characteristic
A
K
F
2%.
(T J = 25 C; R GK = 1.0 K unless otherwise noted)
T
U
R
J
S
PACKAGE DIMENSIONS
C
–T–
CASE 221A–06
(TO-220AB)
T J = 25 C
T J = 110 C
SEATING
PLANE
Symbol
STYLE 3:
(dv/dt)
I DRM
I RRM
V TM
V GT
I GT
PIN 1. CATHODE
I H
2. ANODE
3. GATE
4. ANODE
Min
5.0
0.5
0.5
2.0
—
—
—
NOTES:
*MCR8S/D*
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
Motorola Thyristor Device Data
A
B
C
D
G
H
K
N
Q
R
U
F
J
L
S
T
V
Z
0.65
Typ
1.4
1.0
20
10
—
—
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MIN
–––
INCHES
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
–––
14.48
12.70
Max
MILLIMETERS
500
200
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.46
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
1.8
1.0
6.0
10
—
–––
MCR8S/D
MAX
15.75
10.28
14.27
4.82
0.88
3.73
2.66
3.93
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
–––
Volts
Volts
V/ s
Unit
mA
A
A