CMPA2560025D Cree, Inc., CMPA2560025D Datasheet

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CMPA2560025D

Manufacturer Part Number
CMPA2560025D
Description
Cree, Cmpa0060005f 5w, Gan Hemt Mmic Cree Wireless , Driver
Manufacturer
Cree, Inc.
Datasheet

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Part Number:
CMPA2560025D
Manufacturer:
CREE
Quantity:
1 400
Part Number:
CMPA2560025D
Manufacturer:
CREE/科锐
Quantity:
20 000
CMPA2560025D
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier design approach enabling very wide bandwidths to
be achieved.
Features
Typical Performance Over 2.5-6.0 GHz
Note
Parameter
Gain
Saturated Output Power, P
Power Gain @ P
PAE @ P
1
: P
SAT
24 dB Small Signal Gain
25 W Typical P
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Size
is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
OUT
0.180 x 0.145
43 dBm
OUT
= 43 dBm
SAT
x 0.004 inches
SAT
1
PRELIMINARY
Subject to change without notice.
www.cree.com/wireless
2.5 GHz
27.5
35.8
23.1
31.5
Applications
(T
C
= 25˚C)
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
4.0 GHz
24.3
37.5
20.9
32.8
6.0 GHz
23.1
25.6
16.3
30.7
Units
dB
dB
%
W
1

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CMPA2560025D Summary of contents

Page 1

... CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors ...

Page 2

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2560025D Rev 0.5, Preliminary Symbol V DSS ...

Page 3

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2560025D Rev 0.5, Preliminary Description ~ 1 ...

Page 4

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2560025D Rev 0.5, Preliminary Description CAP, 120pF, +/-10%, SINGLE LAYER, 0.030”, Er 3300, 100V, Ni/Au TERMINATION CAP, 680pF, +/-10%, SINGLE LAYER, 0.070” ...

Page 5

... Typical Performance of the CMPA2560025D as Measured in CMPA2560025F-TB Small Signal Gain vs Frequency 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Power Gain vs Frequency 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 6

... Typical Performance of the CMPA2560025D as Measured in CMPA2560025F-TB Saturated Output Power Performance ( 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Note defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. SAT Power Added Efficiency vs Output Power ...

Page 7

... Typical Performance of the CMPA2560025D as Measured in CMPA2560025F-TB 2 Harmonic vs Output Power Function of Frequency 0 2.5 GHz -10 4.0 GHz 6.0 GHz -20 -30 -40 -50 -60 - Output Power, P OUT 2.5 Note: The temperature coefficient is -0.05 dB/°C Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 8

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA2560025D Rev 0.5, Preliminary D Z Source G ...

Page 9

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA2560025D Rev 0.5, Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

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