VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet

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VS-EMF050J60U

Manufacturer Part Number
VS-EMF050J60U
Description
3-levels Half-bridge Inverter Stage, 60 A/57 A
Manufacturer
Vishay
Datasheet

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Part Number:
VS-EMF050J60U
Quantity:
70 000
Document Number: 93494
Revision: 18-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
Q2 - Q3 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
V
V
CE(ON)
CE(ON)
I
I
C
C
typical at I
typical at I
at T
at T
V
V
C
C
CES
CES
= 98 °C
= 93 °C
1° LEVEL OF HALF-BRIDGE
2° LEVEL OF HALF-BRIDGE
C
C
3-Levels Half-Bridge Inverter Stage, 60 A/57 A
= 50 A
= 50 A
EMIPAK2
For technical questions, contact:
SYMBOL
2.73 V
600 V
900 V
V
I
I
V
V
V
V
1.8 V
50 A
50 A
LM
LM
This datasheet is subject to change without notice.
T
I
I
P
P
ISOL
T
CES
GES
CM
CES
GES
CM
I
I
Stg
C
C
D
D
J
(1)
(2)
T
T
T
T
T
T
T
T
T
J
C
C
C
C
C
C
C
C
= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
TEST CONDITIONS
FEATURES
• Warp1 and Warp2 PFC IGBT
• FRED Pt
• FRED Pt
• Integrated thermistor
• Square RBSOA
• Operating frequency 60 kHz to 150 kHz
• Low internal inductances
• Low switching loss
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
indmodules@vishay.com
®
®
and HEXFRED
clamping diodes
Vishay Semiconductors
®
VS-EMF050J60U
antiparallel diodes
www.vishay.com/doc?91000
- 40 to 125
MAX.
3500
150
600
150
150
338
189
900
150
150
338
189
20
88
60
20
85
57
www.vishay.com
UNITS
°C
W
W
A
A
A
A
A
A
V
V
V
V
V
1

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VS-EMF050J60U Summary of contents

Page 1

... Low switching loss • Compliant to RoHS Directive 2002/95/EC 600 V DESCRIPTION 1.8 V VS-EMF050J60U is an integrated solution for a multi level 50 A inverter half-bridge in a single package. The EMIPAK2 package is easy to use thanks to the solderable terminals 900 V and provides improved thermal performance thanks to the exposed substrate ...

Page 2

... VS-EMF050J60U Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER CLAMPING DIODE Repetitive peak reverse voltage Single pulse forward current Diode continuous forward current Power dissipation DIODE Single pulse forward current Diode continuous forward current Power dissipation DIODE Single pulse forward current ...

Page 3

... 600 125 ° 125 ° 125 ° indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors MIN. TYP. MAX. UNITS 900 - - 8.5 - V/°C - 2.45 2.8 - 2. 2.43 2.9 2.8 4.5 6 ...

Page 4

... VS-EMF050J60U Vishay Semiconductors SWITCHING CHARACTERISTICS (T PARAMETER IGBT (WITH FREEWHEELING CLAMPING DIODE) Total gate charge (turn-on) Gate to ermitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time ...

Page 5

... J SYMBOL TEST CONDITIONS 100 °C 100 °C ° SYMBOL R thJC R thCS indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors MIN. TYP. MAX. UNITS - 7 185 440 nC - 107 147 ...

Page 6

... VS-EMF050J60U Vishay Semiconductors 100 125 ° ° 0.5 1.0 1.5 2.0 2.5 V (V) 93494_01 CE Fig Typical IGBT Output Characteristics 100 T = 125 ° 0.5 1.0 1.5 2.0 2.5 3.0 V (V) 93494_02 CE Fig Typical IGBT Output Characteristics ...

Page 7

... 1000 100 = 25 °C 2.5 3 93494_12 Fig Typical IGBT Switching Time vs. I (with Freewheeling Clamping Diode 125 ° indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors Continuous Forward Current ( off ...

Page 8

... VS-EMF050J60U Vishay Semiconductors 160 150 140 130 125 °C 120 110 100 ° 100 200 300 400 dI /dt (A/μs) 93494_13 F Fig Typical Antiparallel Diode Reverse Recovery Time vs 200 1100 1000 900 800 ...

Page 9

... Fig Maximum IGBT Collector Current vs. 4.0 V 3.5 3.0 2.5 2.0 1.5 1.0 3.5 4.0 10 93494_21 Fig Typical IGBT Collector to Emitter Voltage vs. indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors 100 - Continuous Collector Current (A) C Case Temperature per Junction = 100 ...

Page 10

... VS-EMF050J60U Vishay Semiconductors 100 125 ° ° (V) 93494_22 GE Fig Typical IGBT Transfer Characteristics 5.5 5 °C J 4.5 4.0 3.5 3 125 °C J 2.5 2.0 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 I (mA) 93494_23 C Fig Typical IGBT Gate Threshold Voltage ...

Page 11

... 400 indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors 125 °C 25 °C 200 300 400 500 dI /dt (A/μs) F Recovery Time vs 400 125 ° ...

Page 12

... VS-EMF050J60U Vishay Semiconductors 1 0.1 0.01 0.001 0.00001 0.0001 93494_33 Fig Maximum Thermal Impedance 0.1 0.01 0.001 0.00001 0.0001 93494_34 Fig Maximum Thermal Impedance Z 100 125 ° 0.5 1.0 1.5 2.0 V (V) 93494_35 FM Fig Typical Clamping Diode Forward Characteristics www.vishay.com For technical questions, contact: ...

Page 13

... Fig Typical Clamping Diode Reverse 0.01 DC 0.001 0.01 0 Rectangular Pulse Duration (s) 1 Characteristics ( Clamping Diode) thJC indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors 125 °C 25 °C 200 300 400 500 dI /dt (A/μs) F Recovery Current vs 200 125 ° ...

Page 14

... VS-EMF050J60U Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS TYPICAL CONNECTION Note • Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only. www.vishay.com For technical questions, contact: 14 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 15

... LINKS TO RELATED DOCUMENTS indmodules@vishay.com This datasheet is subject to change without notice. VS-EMF050J60U Vishay Semiconductors 9 14 MID VMID www.vishay.com/doc?95436 www.vishay.com www.vishay.com/doc?91000 15 ...

Page 16

... Flat metal plate or with optional M4 thread Document Number: 95436 Revision: 27-Jan-11 EMIPAK2 Pins position with tolerance Side view 20.5 ± ref. Detail “A” Scale 10:1 Detail “A” Ceramic gap 0.1 For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 15.2 14 11.4 12.7 8.9 10.2 7.6 7.6 5.1 Ø 0.4 6.4 3.8 3.8 2.6 1.3 1.3 5.1 8.9 2 ...

Page 17

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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