IRF4905 International Rectifier, IRF4905 Datasheet
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IRF4905
Manufacturer Part Number
IRF4905
Description
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
Manufacturer
International Rectifier
Datasheet
1.IRF4905.pdf
(8 pages)
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
TO-220AB
Max.
-260
-5.0
200
± 20
930
-74
-52
-38
1.3
20
®
IRF4905
R
Power MOSFET
DS(on)
V
Max.
0.75
–––
62
DSS
I
D
= -74A
PD - 9.1280C
= -55V
= 0.02
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
8/25/97