IRF7402 International Rectifier, IRF7402 Datasheet - Page 2

• Manufacturer Part Number: IRF7402
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

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IRF7402
Electrical Characteristics @ T
Notes:

‚
Source-Drain Ratings and Characteristics
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
r
d(off)
f
I
S
SM
rr
DSS
V
fs
(BR)DSS
GS(th)
GSS
iss
oss
rss
SD
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
rr
I
T
2
(BR)DSS
max. junction temperature. (See fig. 11)
SD
J
150°C
3.8A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
96A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
0.70 –––
Min. Typ. Max. Units
––– 0.024 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.1
20
„
ƒ Pulse width
…
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601
300
150
–––
–––
–––
–––
–––
––– -100
650
–––
–––
2.0
6.3
5.1
–––
14
47
24
32
51
69
0.035
0.050
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
100
1.0
3.0
9.5
1.2
25
22
2.5
77
54
300µs; duty cycle
V/°C
µA
nA
nC
ns
pF
nC
ns
V
S
V
V
A
ƒ = 1.0MHz, See Fig. 5
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
MOSFET symbol
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 3.8A
= 3.8A
= 25°C, I
= 25°C, I
= 6.2
= 2.6 ƒ
= V
= 10V, I
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= 12V
= -12V
= 4.5V, See Fig. 6 and 12 ƒ
= 10V
= 0V
GS
Conditions
, I
D
S
F
D
D
2%.
= 250µA
D
D
GS
GS
Conditions
= 3.8A, V
= 3.8A
= 250µA
= 1.9A
= 4.1A ƒ
= 3.5A ƒ
= 0V
= 0V, T
D
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= 1mA
GS
J
= 125°C
= 0V ƒ
G
D
S