IRF7451PBF International Rectifier, IRF7451PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7451PBF
• Description: SMPS MOSFET
• Manufacturer: International Rectifier

Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
fs
2
AS
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
3.5
Min. Typ. Max. Units
–––
–––
–––
–––
–––
1260 –––
0.19 –––
–––
––– 0.09
–––
–––
–––
–––
––– -100
–––
990
220
100
180
–––
–––
–––
270
6.8
4.2
28
13
10
17
15
42
76
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
400
5.5
1.3
25
41
10
20
2.3
29
V/°C
µA
nA
nC
ns
pF
nC
ns
V
Ω
V
S
V
Typ.
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 2.2A
= 2.2A
= 25°C, I
= 25°C, I
= 6.5Ω
= V
= 150V, V
= 120V, V
= 25V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V „
= 75V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.2A, V
= 2.2A
= 250µA
= 2.2A
= 2.2A
GS
GS
= 0V to 120V …
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
210
3.6
= 0V, T
= 0V
D
www.irf.com
= 1mA „
GS
„
J
G
= 0V „
= 150°C
Units
mJ
A
S
D