IRF7754GPBF International Rectifier, IRF7754GPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7754GPBF
• Description: Power MOSFET
• Manufacturer: International Rectifier

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IRF7754GPbF
Source-Drain Ratings and Characteristics

Notes:
‚
Electrical Characteristics @ T
V
I
I
V
t
Q
V
∆V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
S
SM
rr
I
d(on)
d(off)
r
f
DSS
GSS
2
fs
SD
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
DS(on)
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1984 –––
–––
–––
-12
––– 0.008 –––
–––
–––
ƒ
16
When mounted on 1 inch square copper board, t < 10 sec.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
267
618
385
–––
–––
––– -100
191
3.9
4.8
9.8
27
39
22
18
14.7
-1.2
–––
-0.9
–––
-1.0
100
–––
–––
–––
401
–––
–––
287
-25
-1.0
-22
59
41
25
34
49
27
V/°C
mΩ
nC
µA
nC
ns
pF
ns
nA
V
V
V
S
A
di/dt = -100A/µs
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -5.4A
= -1.0A
= 25°C, I
= 25°C, I
= 6Ω
= 6Ω ‚
= 0V, I
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -8V
= 8V
= -6V
= -6V, V
= 0V
= -6V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -4.5V ‚
GS
Conditions
, I
D
S
F
D
Conditions
GS
= -250µA
D
= -1.0A, V
= -1.0A
D
D
D
= -250µA
GS
GS
= -5.4A
= -5.4A ‚
= -4.6A ‚
= -3.9A ‚
= -4.5V
‚
= 0V
= 0V, T
D
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= -1mA
GS
J
G
= 70°C
= 0V
‚
S
D