IRFB16N60L International Rectifier, IRFB16N60L Datasheet - Page 2

• Manufacturer Part Number: IRFB16N60L
• Description: SMPS MOSFET
• Manufacturer: International Rectifier

Notes:

‚
ƒ
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
E
I
E
R
R
Static @ T
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
2
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
AS
AR
θJC
θJA
g
gs
gd
Repetitive rating; pulse width limited by
I
max. junction temperature. (See Fig. 12)
T
Starting T
SD
Symbol
(BR)DSS
Symbol
Symbol
Symbol
I
AS
J
eff.
eff. (ER)
≤ 150°C.
≤ 16A, di/dt ≤ 650A/µs, V
= 16A.(See Figure 14a)
/∆T
J
J
= 25°C, L = 2.5mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Single Pulse Avalanche Energy.
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
DD
h
≤ V
Ù
G
h
(BR)DSS
= 25Ω,
,
™
„
…
†
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
C
as C
oss
oss
Min. Typ. Max. Units
Min. Typ. Max. Units
θ
600
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
8.3
oss
oss
eff. is a fixed capacitance that gives the same charging time
eff.(ER) is a fixed capacitance that stores the same energy
while V
while V
2720
0.39
0.79
–––
385
–––
–––
–––
–––
–––
–––
–––
–––
–––
260
120
100
5.5
20
44
28
20
DS
DS
Typ.
Typ.
-100
–––
–––
460
100
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
2.0
is rising from 0 to 80% V
is rising from 0 to 80% V
50
30
46
V/°C
mΩ
mA
nC
µA
nA
pF
ns
Ω
V
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
= 16A
= 16A
= 1.8Ω
= 0V, I
= 10V, I
= V
= 600V, V
= 480V, V
= 30V
= -30V
= 50V, I
= 480V
= 10V, See Fig. 7 & 15
= 300V
= 10V, See Fig. 11a & 11b
= 0V
= 25V
= 0V,V
GS
Max.
Max.
310
, I
0.4
16
31
62
D
Conditions
Conditions
DS
D
DSS
DSS
D
D
= 250µA
= 250µA
= 9.0A
= 9.0A
= 0V to 480V
GS
GS
.
.
= 0V
= 0V, T
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D
f
= 1mA
J
= 125°C
Units
Units
°C/W
g
f
mJ
mJ
A
f