IRFZ44V International Rectifier, IRFZ44V Datasheet - Page 2
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IRFZ44V
Manufacturer Part Number
IRFZ44V
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
1.IRFZ44V.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ44V
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ44V
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFZ44VL
Manufacturer:
IR
Quantity:
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Company:
Part Number:
IRFZ44VLPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ44VZ
Manufacturer:
IR
Quantity:
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Source-Drain Ratings and Characteristics
IRFZ44V
Electrical Characteristics @ T
Notes:
I
I
V
DV
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
d(off)
SM
on
r
f
S
rr
fs
D
S
(BR)DSS
GS(th)
SD
2
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25W , I
/DT
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 89µH
AS
= 51A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width £ 300µs; duty cycle £ 2%.
T
–––
–––
–––
SD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
60
24
–––
–––
–––
–––
–––
–––
J
£ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
£ 51A, di/dt £ 227A/µs, V
0.062 –––
1812 –––
–––
146
–––
––– 16.5
–––
–––
–––
–––
–––
––– -100
–––
–––
393
103
–––
–––
–––
4.5
13
97
40
57
7.5
70
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
219
105
4.0
2.5
25
67
18
25
220
55
V/°C
mW
nH
µA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
di/dt = 100A/µs
T
MOSFET symbol
integral reverse
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 51A
= 51A
= 25°C, I
= 25°C, I
= 0.6W , See Fig. 10
= 9.1W
£ V
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 0V
= 25V
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 51A
= 51A, V
,
= 250µA
= 31A
= 31A
= 0V
= 0V, T
D
= 1mA
GS
J
www.irf.com
= 150°C
= 0V
G
G
S
+L
D
D
S
)
S
D