SI2343CDS VISHAY, SI2343CDS Datasheet - Page 4
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SI2343CDS
Manufacturer Part Number
SI2343CDS
Description
P-Channel 30-V MOSFET
Manufacturer
VISHAY
Datasheet
1.SI2343CDS.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2343CDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2343CDS-T1-GE3
Manufacturer:
VISHAY
Quantity:
36 000
Part Number:
SI2343CDS-T1-GE3
Manufacturer:
V1SHAY
Quantity:
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Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.2
2.0
1.8
1.6
1.4
1.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
T
25
- Temperature (°C)
J
0.6
= 150 °C
50
0.9
75
T
J
I
0.01
= 25 °C
D
100
0.1
10
= 250 µA
100
1
0.1
1.2
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
125
A
GS
= 25 °C
> minimum V
V
1.5
150
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
0.10
0.08
0.06
0.04
0.02
10
10
DS(on)
8
6
4
2
0
0.01
2
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
T
J
V
= 25 °C
4
GS
100
- Gate-to-Source Voltage (V)
1
Time (s)
T
6
A
= 25 °C
S09-2270-Rev. A, 02-Nov-09
10
Document Number: 65474
T
J
= 125 °C
I
D
www.DataSheet4U.com
= 4.2 A
8
100
1000
10