HER105-TB WonTop Electronics Co., Ltd, HER105-TB Datasheet

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HER105-TB

Manufacturer Part Number
HER105-TB
Description
1.0a Ultrafast Diode
Manufacturer
WonTop Electronics Co., Ltd
Datasheet
1.HER105-TB.pdf (4 pages)
Features
!
!
!
!
!
Mechanical Data
!
!
!
!
!
!
!
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
HER101 – HER108
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
POWER SEMICONDUCTORS
Characteristic
WTE
@T
@T
@T
@I
A
F
A
= 100°C
A
= 1.0A
= 25°C
= 55°C
Symbol
V
V
V
T
R(RMS)
I
V
I
RWM
V
FSM
RRM
STG
I
RM
C
t
T
FM
O
rr
R
j
j
HER101 – HER108
HER
101
50
35
1 of 4
HER
102
100
70
1.0
@T
HER
103
200
140
50
20
A
=25°C unless otherwise specified
A
HER
104
300
210
-65 to +125
-65 to +150
Dim
A
B
C
D
100
1.0
5.0
1.0A ULTRAFAST DIODE
30
All Dimensions in mm
HER
105
400
280
1.3
B
DO-41
25.4
4.06
0.71
2.00
Min
HER
106
600
420
© 2006 Won-Top Electronics
HER
D
107
800
560
1.7
75
15
0.864
Max
5.21
2.72
—
A
1000
HER
108
700
Unit
µA
nS
pF
°C
°C
Pb
V
V
A
A
V
C

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HER105-TB Summary of contents

Page 1

WTE POWER SEMICONDUCTORS Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability Mechanical Data ! Case: DO-41, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ...

Page 2

... Pulse width = 300 s 10 HER101 - HER104 1.0 0.1 0.01 0 0.2 0.4 0.6 0 INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 2 Typical Forward Characteristics 100 HER101 - HER105 10 HER106- HER108 REVERSE VOLTAGE (V) R Fig. 4 Typical Junction Capacitance t rr +0.5A 0A -0.25A -1.0A Set time base for 5/10ns/cm © 2006 Won-Top Electronics ...

Page 3

MARKING INFORMATION Cathode HER10x HER10x x WTE WTE PACKAGING INFORMATION TAPE & REEL 330mm Product ID Label Reel Diameter / Packaging Box Size (mm) TAPE & REEL TAPE & BOX 255 150 BULK 198 ...

Page 4

... Product No. HER101-T3 HER101-TB HER101 HER102-T3 HER102-TB HER102 HER103-T3 HER103-TB HER103 HER104-T3 HER104-TB HER104 HER105-T3 HER105-TB HER105 HER106-T3 HER106-TB HER106 HER107-T3 HER107-TB HER107 HER108-T3 HER108-TB HER108 Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies ...

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