BTA06-600B SemiWell Semiconductor Co., Ltd., BTA06-600B Datasheet

no-image

BTA06-600B

Manufacturer Part Number
BTA06-600B
Description
Bi-Directional Triode Thyristor, TO-220F
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA06-600B
Manufacturer:
ST
Quantity:
1 000
Part Number:
BTA06-600B
Manufacturer:
ST
0
Part Number:
BTA06-600B
Manufacturer:
ST
Quantity:
20 000
Part Number:
BTA06-600B(ROHS)
Manufacturer:
ST
0
Part Number:
BTA06-600B/
Manufacturer:
ST
0
Part Number:
BTA06-600B/C
Manufacturer:
ST
0
Part Number:
BTA06-600B/C/D
Manufacturer:
ST
0
Part Number:
BTA06-600BRG
Manufacturer:
ST
Quantity:
10
Part Number:
BTA06-600BRG
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
BTA06-600BRG
Quantity:
9 000
Part Number:
BTA06-600BW
Manufacturer:
ST
Quantity:
145
Part Number:
BTA06-600BWRG
Manufacturer:
CIRRUS
Quantity:
872
Part Number:
BTA06-600BWRG
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
BTA06-600BWRG
Quantity:
3 600
Features
Bi-Directional Triode Thyristor
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
Absolute Maximum Ratings
Mar, 2004. Rev. 0
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
High Commutation dv/dt
Isolation Voltage ( V
Symbol
I
P
V
T(RMS)
T
V
I
P
V
G(AV)
I
TSM
DRM
I
GM
T
STG
ISO
GM
GM
2
J
SemiWell
t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
2
t
ISO
Semiconductor
Parameter
= 1500V AC )
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
T(RMS)
= 6 A )
( T
J
= 25°C unless otherwise specified )
T
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
A.C. 1 minute
C
= 94 °C
Condition
Symbol
TO-220F
BTA06-600B
Preliminary
1
- 40 ~ 125
- 40 ~ 150
Ratings
1.T1
2
60/66
1500
600
6.0
3.0
0.3
2.0
2.0
3
18
10
▼ ▲
UL : E228720
2.T2
3.Gate
Units
A
°C
°C
W
W
V
A
A
A
V
V
g
2
s
1/6

Related parts for BTA06-600B

BTA06-600B Summary of contents

Page 1

... STG Mass Mar, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 25°C unless otherwise specified ) J Condition °C C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive A.C. 1 minute Preliminary BTA06-600B UL : E228720 Symbol 2.T2 ○ ▼ ▲ ○ 3.Gate 1.T1 ○ TO-220F Ratings Units 600 V 6 ...

Page 2

... BTA06-600B Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage TM + Ⅰ I GT1 - Ⅱ Gate Trigger Current I GT1 - Ⅲ I GT3 + Ⅰ V GT1 - Ⅱ Gate Trigger Voltage V GT1 - Ⅲ V GT3 V Non-Trigger Gate Voltage GD Critical Rate of Rise Off-State (dv/dt)c Voltage at Commutation I Holding Current ...

Page 3

... Conduction Angle Fig 6. Gate Trigger Voltage vs GT1 _ V GT1 0.1 - BTA06-600B 1.0 1.5 2.0 2.5 3.0 On-State Voltage [V] Allowable Case Temperature θ θ π π 2 θ θ θ 360° θ = 120 θ = 150 θ ...

Page 4

... BTA06-600B Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 - Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ A ● ● Test Procedure Ⅰ 4/6 Fig 8. Transient Thermal Impedance GT1 _ I GT1 GT3 -2 100 150 10Ω ...

Page 5

... φ BTA06-600B Inch Typ. Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059 φ 1 φ Gate ...

Page 6

... BTA06-600B TO-220F Package Dimension, Forming Dim. Min. A 10.4 B 6.18 C 9.55 D 8.4 E 6.05 F 1.26 G 3.17 H 1. 2.51 M 1.25 N 0.45 O 0.6 P φ φ 1 φ 6/6 mm Typ. Max. Min. 10.6 0.409 6.44 0.243 9.81 0.376 8.66 0.331 6.15 0.238 1.36 0.050 3.43 0.125 2.13 0.074 2.83 0.101 2.54 5.08 2.62 0.099 1.55 0.049 0.63 0.018 1.0 0.024 5.0 3.7 3.2 1 φ ...

Related keywords