IRL3705N International Rectifier, IRL3705N Datasheet

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... Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA G Parameter @ 10V GS @ 10V GS Parameter PD - 9.1370C IRL3705N ® HEXFET Power MOSFET 55V DSS R = 0.01 DS(on 89A D S TO-220AB Max 310 170 1 ...

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... IRL3705N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

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... Ga te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 1000 100 20 µ LSE 5° 100 IRL3705N VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V 2 µ LSE 75°C 1 0.1 1 ...

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... IRL3705N 6000 iss 5000 4000 3000 2000 1000 rain-to-S ource Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 75° 5°C ...

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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V 90% 125 150 175 ° 10% V Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRL3705N D.U. 5.0V Pulse Width µs Duty Factor ...

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... IRL3705N 10V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 800 15 V 600 400 + ...

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... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRL3705N + =10V ...

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... IRL3705N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. & ...