IRL3803VS International Rectifier, IRL3803VS Datasheet - Page 2

• Manufacturer Part Number: IRL3803VS
• Description: (IRL3803Vx) HEXFET Power MOSFET
• Manufacturer: International Rectifier

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
ƒ
„
…
Notes:
R
L
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
V
t
Q
t
DSS
d(on)
r
d(off)
f
SM
S
rr
on
D
fs
S
2
DS(on)
(BR)DSS
GS(th)
AS
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and
I
represents operation outside rated limits.
T
(BR)DSS
R
max. junction temperature. (See fig. 11)
Starting T
SD
J
G
≤ 175°C
≤ 71A di/d ≤ 110A/µs, V
= 25Ω, I
/∆T
J
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Drain-to-Source Leakage Current
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 160µH
AS
= 71A, V
GS

Parameter
Parameter
=10V (See Figure 12)
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚ˆ
†
‡
ˆ
‰
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1560…400†
Min. Typ. Max. Units
1.0
–––
Min. Typ. Max. Units
–––
30
82
–––
–––
–––
–––
–––
Calculated continuous current based on maximum allowable
Uses IRL3803 data and test conditions.
This is applied to D
This is a calculated value limited to T
(FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Intrinsic turn-on time is negligible (turn-on is dominated by L
junction temperature. Package limitation current is 75A.
0.028 –––
3720 –––
1480 –––
4.5
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
180
7.5
270
–––
–––
–––
16
29
37
91
52
140‡
–––
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
140
5.5
7.5
1.2
25
76
19
35
470
78
V/°C
mΩ
2
µA
nA
nC
mJ
nC
pF
ns
V
V
S
Pak, when mounted on 1" square PCB
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5 ˆ
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
J
J
= 71A
= 71A
= 25°C, I
= 25°C, I
= 71A, L = 0.16mH
= 1.3Ω
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13 ˆ
= 15V
= 4.5V, See Fig. 10 „ˆ
= 0V
GS
, I
J
D
S
F
D
D
D
Conditions
= 175°C .
= 250µA
D
GS
GS
Conditions
= 71A
= 71A, V
= 250µA ˆ
= 71A
= 71A„ˆ
= 59A
„ˆ
= 0V, T
= 0V
D
www.irf.com
= 1mA ˆ
GS
„
„
J
= 150°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D