IRLZ34N International Rectifier, IRLZ34N Datasheet
IRLZ34N
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IRLZ34N Summary of contents
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... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient 10V GS @ 10V GS 300 (1.6mm from case) Min. –––– –––– –––– 9.1307B IRLZ34N ® HEXFET Power MOSFET 55V DSS R = 0.035 DS(on 30A D S TO-220AB Max ...
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... IRLZ34N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...
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... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 2 0µ LSE ° 100 = IRLZ34N 1000 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 100 BOTT µ LSE 75° ...
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... IRLZ34N 1400 1200 iss 1000 800 600 400 C rss 200 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° 5° ...
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... RESPONSE) 0.01 0.00001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 125 150 175 ° SINGLE PULSE 0.0001 0.001 t , Rectangular Pulse Duration (sec) 1 IRLZ34N D.U. 5.0V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10 ...
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... IRLZ34N 5 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform L D.U. 0.01 V (BR)DSS V DD 250 TOP BO TTOM 200 150 100 ...
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... Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLZ34N + + P.W. Period * V =10V ...
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... IRLZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. ...