SUD50N04-06H Vishay, SUD50N04-06H Datasheet
SUD50N04-06H
Available stocks
Related parts for SUD50N04-06H
SUD50N04-06H Summary of contents
Page 1
... DS(on) 40 0.006 @ TO-252 Top View Ordering Information: SUD50N04-06H—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current (Single Pulse) a Repetitive Avalanche Energy (Single Pulse) ...
Page 2
... SUD50N04-06H Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge ...
Page 3
... S-42058—Rev. B, 15-Nov-04 100 0.010 0.008 _ 125 C 0.006 0.004 0.002 0.000 SUD50N04-06H www.DataSheet4U.com Vishay Siliconix Transfer Characteristics 125_C C 20 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current V ...
Page 4
... SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J www.vishay.com 4 100 10 1 100 125 150 175 www.DataSheet4U.com Source-Drain Diode Forward Voltage 150 0.3 0.6 0.9 1.2 V − Source-to-Drain Voltage (V) ...
Page 5
... Normalized Thermal Transient Impedance, Junction-to-Case −2 10 Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see SUD50N04-06H www.DataSheet4U.com Vishay Siliconix Safe Operating Area *Limited by r DS(on dc, 100 25_C ...