SUD50N06-07L Vishay, SUD50N06-07L Datasheet

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SUD50N06-07L

Manufacturer Part Number
SUD50N06-07L
Description
N-Channel 60-V (D-S) 175 C MOSFET
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N06-07L
Manufacturer:
VISHAY
Quantity:
12 500
Notes:
a.
b.
c.
Document Number: 72953
S-41133—Rev. A, 07-Jun-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Duty cycle v 1%.
Surface mounted on 1” FR4 board.
Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
(BR)DSS
ti
60
60
t A bi
(V)
t
b
b
Ordering Information: SUD50N06-07L—E3
J
J
0.0074 @ V
0.0088 @ V
= 175_C)
= 175_C)
r
Parameter
Parameter
N-Channel 60-V (D-S), 175_C MOSFET
G
DS(on)
Top View
TO-252
D
GS
GS
a
(W)
= 10 V
= 4.5 V
S
Drain Connected to Tab
A
I
D
= 25_C UNLESS OTHERWISE NOTED)
96
88
(A)
Steady State
T
t v 10 sec
L = 0 1 mH
L = 0.1 mH
T
T
New Product
C
C
C
c
= 100_C
= 25_C
= 25_C
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
thJA
thJC
P
, T
I
I
DM
AS
DS
GS
AS
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
APPLICATIONS
D Automotive Such As:
D Secondary Synchronous Rectification
G
− High-Side Switch
− Motor Drives
− 12-V Battery
N-Channel MOSFET
Typical
D
S
0.85
15
40
−55 to 175
Limit
"20
100
101
136
96
67
60
45
SUD50N06-07L
c
c
Vishay Siliconix
Maximum
www.DataSheet4U.com
1.1
18
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
V
V
A
A
1

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SUD50N06-07L Summary of contents

Page 1

... DS(on) 0.0074 @ 0.0088 @ TO-252 Top View Ordering Information: SUD50N06-07L—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Repetitive Avalanche Energy ...

Page 2

... SUD50N06-07L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 72953 S-41133—Rev. A, 07-Jun-04 New Product 120 100 0.015 _ 0.012 125 C 0.009 0.006 0.003 0.000 SUD50N06-07L www.DataSheet4U.com Vishay Siliconix Transfer Characteristics 125_C C 20 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current V = 4.5 V ...

Page 4

... SUD50N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 125 100 75 50 Limited By Package 100 T − ...

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