VF20120C Vishay, VF20120C Datasheet - Page 3

• Manufacturer Part Number: VF20120C
• Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number: 89040
Revision: 24-Jun-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
0.001
1000
0.01
100
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
10
1
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
10
0
Percent of Rated Peak Reverse Voltage (%)
20
0.2
T
A
Instantaneous Forward Voltage (V)
= 125 °C
30
T
0.4
T
T
A
A
A
= 150 °C
= 125 °C
= 150 °C
Reverse Voltage (V)
T
40
1
T
A
0.6
A
= 25 °C
T
= 100 °C
A
= 25 °C
50
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0.8
60
T
A
= 100 °C
1.0
70
10
T
f = 1.0 MHz
V
J
sig
1.2
= 25 °C
80
= 50 mVp-p
V20120C, VF20120C, VB20120C & VI20120C
1.4
90
100
100
1.6
New Product
www.DataSheet.co.kr
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10
0.1
10
1
0.01
1
0.01
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Vishay General Semiconductor
Junction to Case
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
V(B,I)20120C
10
10
VF20120C
www.vishay.com
100
100
3
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