SI3585DV Vaishali Semiconductor, SI3585DV Datasheet - Page 6

• Manufacturer Part Number: SI3585DV
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vaishali Semiconductor

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Si3585DV
Vishay Siliconix
www.vishay.com
6
–0.2
–0.4
4.5
3.6
2.7
1.8
0.9
0.0
0.1
0.6
0.4
0.2
0.0
10
1
0.00
0.0
–50
V
I
–25
D
Source-Drain Diode Forward Voltage
DS
= 2.4 A
0.6
T
V
0.3
= 10 V
J
SD
= 150_C
Q
0
– Source-to-Drain Voltage (V)
g
T
Threshold Voltage
– Total Gate Charge (nC)
I
D
J
– Temperature (_C)
= 250 mA
25
Gate Charge
1.2
0.6
50
1.8
0.9
T
75
J
= 25_C
100
2.4
1.2
125
_
1.5
3.0
150
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
–50
0.01
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
Single Pulse Power, Junction-to-Ambient
–25
V
I
D
GS
= 2.4 A
I
D
= 10 V
V
1
= 1.2 A
T
GS
J
0
– Junction Temperature (_C)
0.1
– Gate-to-Source Voltage (V)
25
2
Time (sec)
50
I
D
= 1.8 A
S-03512—Rev. B, 04-Apr-01
Document Number: 71184
1
3
75
100
4
125
10
150
5
30
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