GP250MLS06S Dynex Semiconductor, GP250MLS06S Datasheet
GP250MLS06S
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GP250MLS06S Summary of contents
Page 1
... The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MLS06S is a 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module is suitable for a variety of medium voltage applications in motor drives and power conversion ...
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... GP250MLS06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Min. Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode –40 - Mounting - M6 Electrical connections - M4 GP250MLS06S Typ. Max. Units - - 87 ˚C/ 194 ˚C/ ˚C/kW ...
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... GP250MLS06S ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. j Symbol Parameter I Collector cut-off current CES (IGBT and diode arms) I Gate leakage current GES V Gate threshold voltage GE(TH) † V Collector-emitter saturation voltage CE(SAT) I Diode forward current F I Diode maximum forward current FM † V Diode forward voltage ...
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... 50 /dt = 1500A CES 250A 15V - 50 CES - G(ON) G(OFF 200nH - - - I = 250A 50 /dt = 1500A CES F GP250MLS06S Typ. Max. Units 810 - ns 310 - 330 - 130 - 165 - 1050 - ns 450 - 380 - ns 160 - ns 18 ...
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... GP250MLS06S TYPICAL CHARACTERISTICS V ge 500 Common emitter T = 25˚C 450 case V is measured at power busbars ce and not the auxiliary terminals 400 350 300 250 200 150 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage, V Fig.3 Typical output characteristics 30 25˚ 15V 300V CE 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2 ...
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... 200 250 300 - (A) C Fig.10 Typical diode turn-off energy vs collector current GP250MLS06S = 15V = 300V 100 150 200 250 Collector current ( 15V = 300V 100 150 ...
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... GP250MLS06S 1400 t d(off) 1200 1000 800 t f 600 t d(on) 400 200 100 150 Collector current, I Fig.11 Typical switching characteristics 600 500 400 300 200 100 T = 125˚ 15V 200 400 Collector-emitter voltage, V Fig.13 Reverse bias safe operating area 8/10 Caution: This device is sensitive to electrostatic discharge ...
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... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 28 ± 0.5 28 ± 0 ± 0 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Module outline type code: M GP250MLS06S Fast on tabs 9/10 ...
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... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...